Investigation on the nitrogen doping of multilayered, porous TiO2 thin films

Gärtner, M.; Osiceanu, Petre; Anastasescu, Mihai; Stoïca, T.; Trapalis, C.; Giannakopoulou, T.; Todorova, N.; Lagoyannis, A.

doi:10.1016/j.tsf.2008.04.027

Cited by 37 publications

(29 citation statements)

References 38 publications

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“…Commercial TiN shows N 1s peak at 395 eV with a shoulder at approximately 396 eV, two small O 1s peaks at 529 and 532 eV, and three Ti 2p 3/2 peaks between 454 and 459 eV and three Ti 2p 1/2 peaks between 460 and 464 eV. The N 1s peak of 396 eVand the N 1s shoulder of 395 eVare attributed to a TiN or TiN x O y phase [10][11][12]14]. The O 1s peak of 532 eV corresponds to a TiN x O y phase and that of 529 eV corresponds to TiO 2 [10][11][12]14].…”

Section: Resultsmentioning

confidence: 98%

“…These methods can be classified into three types. The most commonly employed method involves a heating of powdered titanium compounds in an NH 3 gas at elevated temperatures [10][11][12][13][14][15][16][17]. It has been reported that the extent of nitridation condition strongly depended on the composition, particle size, and crystalline phase of the titanium compound powders used.…”

Section: Introductionmentioning

confidence: 99%

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Formation of needle-like titanium oxynitride particles through nitridation of hydrated titanates

Kiyono

Tsumura

Kiyo

et al. 2011

Ceramics International

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Formation of needle-like titanium oxynitride particles through nitridation of hydrated titanates

Kiyono

Tsumura

Kiyo

et al. 2011

Ceramics International

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“…Owing to its numerous advantages, magnetron sputtering deposition is a well established method for coating which has been already extended to the industry. Nevertheless, deposition of crystalline TiO x N y by dc magnetron sputtering method is difficult and the process must be usually followed by thermal annealing [10,18,23,25,28] or high discharge current during deposition is applied [25,26]. However, nowadays, there is a growing need to deposit photocatalytic films on plastic, i.e.…”

Section: Introductionmentioning

confidence: 99%

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Straňák¹,

Quaas²,

Bogdanowicz³

et al. 2010

J. Phys. D: Appl. Phys.

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To cite this version:Vitezslav Stranak, Marion Quaas, Robert Bogdanowicz, Hartmut Steffen, Harm Wulff, et al.. Effect of nitrogen doping on TiOxNy thin film formation at reactive high-power pulsed magnetron sputtering. Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (28) AbstractThe paper is focused on a study of formation of TiO x N y thin films prepared by pulsed magnetron sputtering of metallic Ti target. Oxygen and nitrogen were delivered into the discharge in the form of reactive gases O 2 and N 2 . The films were deposited by high-power impulse magnetron sputtering working with discharge repetition frequency f = 250 Hz at low (p = 0.75 Pa) and high (p = 10 Pa) pressure. The substrates were on floating potential and thermally stabilized at room temperature during deposition process. Post-deposition thermal annealing was not employed. The chemical composition from XPS diagnostic reveals formation of TiO x N y structure at low flow rate of oxygen in the discharge gas mixture. This result is confirmed by XRD investigation of N elements incorporation into the Ti-O lattice. Decrease of band-gap to values Eg ∼ 1.6 eV in TiOxNy thin film is attributed to formed Ti-N bonds. The discharge properties were investigated by time-resolved optical emission spectroscopy. Time evolution of particular spectral lines (Ar + , Ti + , Ti) is presented together with peak discharge current.

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“…Gartner et. al [6] have also done some studies on N 2 -doped TiO 2 thin films and reported an increase in light harvesting towards the visible range. However, they never used the doped films in any specific applicat ion.…”

Section: Introductionmentioning

confidence: 96%

Performance of TiO2/In(OH)iSj/Pb(OH)xSy Composite ETA Solar Cell Fabricated from Nitrogen Doped TiO2 Thin Film Window Layer

Ayieko¹,

Musembi²,

Waita³

et al. 2013

IJME

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In this work, Titaniu m Dio xide (TiO 2 ) thin films were prepared by spray pyrolysis and thermally annealed at 400℃. The films were characterized as deposited (no annealing) as well as after annealing. Optical studies showed that the energy band gap of the films was lo wered fro m 3.25 eV to 2.90 eV on Nitrogen (N 2 ) doping. The reduction in energy band gap was attributed to the introduction of N 2 impurity states on the bands (conduction band and or valence band). The effect of N 2 doping of Titaniu m Dio xide window layer on the efficiency of the ETA TiO 2 /In(OH) i S j /Pb(OH) x S y solar cell was investigated using a conventional current-voltage (I-V) technique. The photovoltaic conversion efficiency (η) increased fro m 1.06% for the solar cell with undoped films to 1.32% for the solar cell with N 2 -doped films. The increase in photovoltaic conversion efficiency on doping was attributed to increased light absorption due to the Nitrogen doping.

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Investigation on the nitrogen doping of multilayered, porous TiO2 thin films

Cited by 37 publications

References 38 publications

Formation of needle-like titanium oxynitride particles through nitridation of hydrated titanates

Formation of needle-like titanium oxynitride particles through nitridation of hydrated titanates

Effect of nitrogen doping on TiO_xN_y thin film formation at reactive high-power pulsed magnetron sputtering

Performance of TiO2/In(OH)iSj/Pb(OH)xSy Composite ETA Solar Cell Fabricated from Nitrogen Doped TiO2 Thin Film Window Layer

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