Investigation on the structural, optical and electrical properties of mixed SnS2—CdS thin films

AC conductivity and dielectric studies of Cd0.8Sn0.2S thin films

“…The evaluated effective mass of the carrier is 2.61 × 10 −31 kg (0.28 m 0 ). The extrapolation of the linear portion of the plot onto the energy axis gives an optical band gap of the sample as 2.399 eV, which is comparable with the value obtained previously from the optical absorption measurements (Eg = 2.4 eV) …”

“…Figure shows that the XRD pattern of Cd 0.8 Sn 0.2 S thin films deposited onto the glass substrate has a polycrystalline nature, as obtained previously . The results are in good agreement with JCPDS card no: 041‐1049, which indicates a hexagonal structure of the films.…”

“…The EDAX analysis of Cd 0.8 Sn 0.2 S films (Figure ) showed the atomic compositions of Cd, Sn, and S, which indicates near stoichiometric composition of the Cd 0.8 Sn 0.2 S thin film, as Cd = 51.207%, Sn = 13.557%, and S = 35.236%. The presence of Si peaks may be due to the substrate effect …”

“…Few drops of HCl were added for complete dissolution of SnCl 2. The solution was prepared by mixing appropriate amount of cadmium chloride, tin chloride, and thiourea. The obtained solution was pulverized on glass substrates with compressed air (2 bars) and at flow rate of 8 mL/min.…”

“…Various techniques and methods have been applied to deposit doped CdS films such as thermal evaporation, chemical vapor deposition spray pyrolysis (SP), Silar, pulsed laser deposition, sol‐gel, and sputtering . Among all the techniques, the SP technique is best suited for Cd 0.8 Sn 0.2 S thin film deposition because it enables a low production cost of large area thin films and good adherence with easy intentional doping .…”