Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

Ding, J.N.; Yb, Liu; Tan, C.B.; Yuan, N.Y.

doi:10.1186/1556-276x-7-368

Cited by 18 publications

(14 citation statements)

References 25 publications

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“…The above are not valid when the thickness is below 3.5 nm . The fine orientation of the NWs arrays is influenced also by the thickness, the crystallinity, and the surface roughness of the seed layer. − Moreover, the presence of defects at the seed layer can affect the growth rate and the PL properties …”

Section: Resultsmentioning

confidence: 99%

High-Quality, Reproducible ZnO Nanowire Arrays Obtained by a Multiparameter Optimization of Chemical Bath Deposition Growth

Syrrokostas

Govatsi

Yannopoulos

2016

Crystal Growth & Design

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ZnO nanowire arrays represent an important multifunctional platform in nanotechnology with a diverse set of emerging applications. Many parameters and conditions are involved in the growth process affecting quality and reproducibility and hence the functionality of the nanowire arrays. Therefore, the fabrication of high-quality arrays is challenging and demands fastidious optimization. A multiparameter optimization of the growth process is presented here using the chemical bath deposition method of ZnO nanowires on seeded substrates. Parameters such as the seed layer morphology, ammonia and the polyelectrolyte capping agent concentrations, the molecular weight of the polyelectrolyte capping agent, the ammonia evaporation, the substrate placement into the reactor vessel, and the growth duration were adjusted to provide optimum nanowire arrays. Criteria used for selecting the optimum growth conditions include high aspect ratio, high nanowire length growth rate, good alignment, and minimum defect density in the crystal lattice. A critical comparison of the current achievements with the relevant current literature is presented. ZnO nanowire arrays fulfilling all of these criteria hold promise for the fabrication of devices with wide functionalities including solar cells, water splitting, photocatalysis for water purification, nanophotonics, and so on.

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Section: Resultsmentioning

confidence: 99%

High-Quality, Reproducible ZnO Nanowire Arrays Obtained by a Multiparameter Optimization of Chemical Bath Deposition Growth

Syrrokostas

Govatsi

Yannopoulos

2016

Crystal Growth & Design

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“…Thus, the seeding layer should nucleate growth, giving variant grain growth characteristics compared to conventional APCVD thin films due to a reduced film growth induction time, by providing a lower activation energy barrier to improved film formation, yielding denser, faster growing and more adhesive films. 20,[46][47][48][49][50][51][52][53][54][55][56][57] The work presented in this paper explores FTO synthesis by the AA-AP CVD seed-overlay method. 45,46 Seeding strategies have been similarly used to good effect in the formation and control of microstructures in a variety of materials.…”

Section: Introductionmentioning

confidence: 99%

“…45,46 Seeding strategies have been similarly used to good effect in the formation and control of microstructures in a variety of materials. 20,[46][47][48][49][50][51][52][53][54][55][56][57] The work presented in this paper explores FTO synthesis by the AA-AP CVD seed-overlay method. The data illustrates how increasingly controllable morphologies are possible solely through the use of a seed layer and will have important implications in future FTO synthesis and thin film morphology manipulation.…”

Section: Introductionmentioning

confidence: 99%

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

et al. 2015

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We report on the seeded growth of fluorine doped tin oxide (FTO) polycrystalline transparent conducting oxide (TCO) thin films on float glass using a novel two-step chemical vapour deposition (CVD) method. Aerosol-assisted CVD (AACVD) was used to grow a seed layer to direct and promote full film growth via an atmospheric pressure CVD (APCVD) overlay. The method allowed for reproducible control over morphology and denser, rougher, higher-performing TCO at a relatively low growth temperature (500 1C). Growth promotion depended on seeding time with an optimal seeding time being present, below which morphology control and conformal coverage was unavailable. The film properties and functional characteristics were characterised by SEM, AFM, XRD, XPS, UV-Vis-Near IR transmittancereflectance and Hall Effect probe measurements. Highly transparent and electrically conductive films, comparable to commercial materials and with high roughness and low transmission haze values indicate the process yields high quality films with a controllable morphology that can be tuned to desired application. The versatile method provides a route towards the morphological control of high-quality FTO thin films with high optical clarity and low-emissivity properties and can be readily extended to a variety of different substrates and metal oxide materials. Fig. 7 Illustrative F-1s XPS sputtered depth profile spectra representative of FTO films formed at various AACVD seed -APCVD overlay times (A), XPS calculated F-1s binding energy positions (B), fluorine dopant concentration (C) and illustrative Sn-3d surface scan (D).

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“…These studies take advantage of the incubation period of ZnO growth to form ZnO islands which can then be used as seeds for the growth of nanopillars [208,304,319]. In some reports, ALD-grown ZnO thin films have been utilized as template for the subsequent growth of ZnO nanorods using hydrothermal process [320][321][322][323][324]. In these reports, ALDgrown ZnO provides a high-quality textured film to either act as a seed layer for nanorod growth or to protect the substrate from reagents of hydrothermal process.…”

Section: D Structuresmentioning

confidence: 99%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

Cited by 18 publications

References 25 publications

High-Quality, Reproducible ZnO Nanowire Arrays Obtained by a Multiparameter Optimization of Chemical Bath Deposition Growth

High-Quality, Reproducible ZnO Nanowire Arrays Obtained by a Multiparameter Optimization of Chemical Bath Deposition Growth

Influencing FTO thin film growth with thin seeding layers: a route to microstructural modification

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

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