2010
DOI: 10.1149/1.3483489
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(Invited) An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization

Abstract: An overview of the different metal bonding techniques used for 3D integration is presented. Key parameters such as surface preparation, temperature and duration of annealing, achievable wafer-to-wafer alignment and electrical results are reviewed. A special focus is done on direct bonding of patterned metal/dielectric surfaces. A mechanism for copper direct bonding is proposed based on bonding toughness measurements, XRR, XRD and TEM analysis. Dedicated characterization techniques for such bonding are presente… Show more

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Cited by 12 publications
(1 citation statement)
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“…More importantly, if the Cu/Cu interface is defective, e.g., pre-existing interfacial voids or nanoscale roughness due to weak sample preparation and annealing process, damage mechanisms, such as void growth, void coalescence, and mechanical failure, might occur. 26,29,30 This would deteriorate the mechanical integrity and electronic reliability of the components. 31,32 Hence, a deep understanding of the mechanical response of interfacial voids to the annealing-induced tensions is crucial for the successful fabrication of the components.…”
mentioning
confidence: 99%
“…More importantly, if the Cu/Cu interface is defective, e.g., pre-existing interfacial voids or nanoscale roughness due to weak sample preparation and annealing process, damage mechanisms, such as void growth, void coalescence, and mechanical failure, might occur. 26,29,30 This would deteriorate the mechanical integrity and electronic reliability of the components. 31,32 Hence, a deep understanding of the mechanical response of interfacial voids to the annealing-induced tensions is crucial for the successful fabrication of the components.…”
mentioning
confidence: 99%