Abstract:Germanium-silicon core-shell nanowire (NW) heterostructures are promising building blocks to enable improved performance of nanophotonic and nanoelectronic devices. However, surface passivation is an important requirement for realization of NW-based devices: Small diameter Ge nanowires have large surface area-to-volume ratio, and carrier scattering and recombination at the surface defects may significantly compromise the electronic and optoelectronic properties of nanowire devices. On promising approach to pas… Show more
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