Ion beam gettering in AIII−BV compounds compared to silicon

Abstract

After a short survey on gettering problems in semiconductor technology new results concerning ion beato gettering for silicon and Am--B v compounds are reviewed.Our own results in the field of ion beato gettering in GaP demonstrate that (i) the gettering by implanted aluminium atoms is proved, and (ii) the ion beato damage in GaP is suitable for the gettering of copper atoms.