1996
DOI: 10.1557/proc-438-277
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Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation

Abstract: Ion beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to B-SiC. I… Show more

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Cited by 9 publications
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