2015
DOI: 10.1002/aenm.201501453
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Ion Migration and the Role of Preconditioning Cycles in the Stabilization of the JV Characteristics of Inverted Hybrid Perovskite Solar Cells

Abstract: groups have recently and independently demonstrated that, by applying an electric fi eld across a pristine fi lm of 3D hybrid perovskites of different chemical composition, a self-sustained fi eld is induced in the semiconductor as a consequence of ion migration toward the electrode regions. [10][11][12][13] The formation of a self-sustained internal fi eld upon device polarization is also in good agreement with the observations reported by Tan et al. when testing perovskite-based light emitting diodes. [ 14 ]… Show more

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Cited by 182 publications
(178 citation statements)
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“…These accumulated ions result in both a change of the internal field and a concomitant modulation of interfacial barriers, which ultimately results in the hysteretic behavior. [121] This model can be simply depicted as an interfacial mechanism, as shown in Figure 8.…”
Section: Ion Migrationmentioning
confidence: 99%
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“…These accumulated ions result in both a change of the internal field and a concomitant modulation of interfacial barriers, which ultimately results in the hysteretic behavior. [121] This model can be simply depicted as an interfacial mechanism, as shown in Figure 8.…”
Section: Ion Migrationmentioning
confidence: 99%
“…[171] Recent evidence consistently suggests that c) the migration of iodide ions plays the major role in the hysteretic behavior of PSCs. [121] Xiao et al [173] proposed that positively charged iodide vacancies, V I , were responsible for the n-type doping in PSC under an external electrical field. Furthermore, long-term electrical biasing in devices with lateral electrodes led to an obvious degradation at the anode side.…”
Section: Wwwadvancedsciencenewscommentioning
confidence: 99%
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“…There have been a lot of reports dealing with the issue since perovskite solar cells became a hot topic. Several components are considered for the origin of hysteresis such as ferroelectricity, [10][11][12][13] ion migration, [14][15][16][17][18][19][20][21][22] carrier trapping 15,26 and capacitance component at the interfaces. [27][28][29][30][31][32] The effect of ferroelectricity is analyzed as the response of bias poling.…”
mentioning
confidence: 99%