Ionic liquid based dopant-free band edge shift in BiVO<sub>4</sub> particles for photocatalysis under simulated sunlight irradiation

Khan, Niqab; Wolff, Rogério Nunes; Ullah, Hameed; Chacón, Gustavo; Rosa, Washington Santa; Dupont, Jaı̈rton; Gonçalves, Renato V.; Khan, Sherdil

doi:10.1039/d2ma00259k

Mater. Adv.

2022

DOI: 10.1039/d2ma00259k

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Ionic liquid based dopant-free band edge shift in BiVO₄ particles for photocatalysis under simulated sunlight irradiation

Niqab Khan

Rogério Nunes Wolff

Hameed Ullah

et al.

Abstract: Foreign elemental doping is a widely utilized strategy to modify the electronic-structure of semiconductors. Herein, we present a dopant-free novel synthesis approach to control the electronic-structure of a semiconductor. Utilizing...

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2024

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Cited by 2 publications

References 69 publications

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The effect of ionic liquids on the surface and photocatalytic properties of semiconducting materials

Pancielejko,

Kroczewska-Gnatowska,

Mazierski

et al. 2024

Chemical Engineering Journal

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The effect of ionic liquids on the surface and photocatalytic properties of semiconducting materials

Pancielejko,

Kroczewska-Gnatowska,

Mazierski

et al. 2024

Chemical Engineering Journal

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Triggering Synergy between p-Type Sputter-Deposited FeMnO_x or FeNiO_x and W-Doped BiVO₄ for Enhanced Oxygen Evolution

Khan,

Koche,

Centurion

et al. 2024

ACS Appl. Energy Mater.

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Engineering the photogenerated charge transfer through the solid−liquid interface is a key factor in boosting the solar energy conversion device performance, particularly, for BiVO 4 , which suffers recombination due to its short hole diffusion length and faster e − /h + recombination. Site-selective cocatalysts have a strong potential to scavenge holes from the BiVO 4 surface. However, uniform incorporation of the cocatalyst on the semiconductor surface is also challenging. This study describes simple one-step radio frequency (RF) magnetron sputtering deposition of bimetallic p-type FeMnO x and FeNiO x hole-selective cocatalysts over pure and W-doped BiVO 4 particles which led to a remarkable improvement in photocatalytic O 2 evolution. As compared with the pristine BiVO 4 (93 μmol), the photocatalytic O 2 evolution enhanced to 143 and 181 μmol per 25 mg of samples upon loading FeMnO x cocatalyst over pure and W-doped BiVO 4 , respectively, under solar irradiation conditions (AM 1.5 G) which were also higher than the previous literature. The enhancement in the photoactivity was attributed to the formation of controlled and site-selective p−n junctions that led to the development of built-in electric field, thereby increasing the charge transfer and suppressing the charge recombination. The band alignment was studied by the classical band bending model, which suggested FeMnO x exhibits an intense built-in electric field compared with FeNiO x , thus resulting in better O 2 evolution. Our study offers a facile way to boost the photocatalytic activity of BiVO 4 by uniformly loading bimetallic cocatalysts as a hole scavenger on the material surface via DC magnetron sputtering. KEYWORDS: photocatalysis, RF-magnetron sputtering, FeMnO x and FeNiO x cocatalysts, oxygen evolution, bismuth vanadate (BiVO 4 )

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Ionic liquid based dopant-free band edge shift in BiVO₄ particles for photocatalysis under simulated sunlight irradiation

Abstract: Foreign elemental doping is a widely utilized strategy to modify the electronic-structure of semiconductors. Herein, we present a dopant-free novel synthesis approach to control the electronic-structure of a semiconductor. Utilizing...

Cited by 2 publications

References 69 publications

The effect of ionic liquids on the surface and photocatalytic properties of semiconducting materials

The effect of ionic liquids on the surface and photocatalytic properties of semiconducting materials

Triggering Synergy between p-Type Sputter-Deposited FeMnO_x or FeNiO_x and W-Doped BiVO₄ for Enhanced Oxygen Evolution

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Ionic liquid based dopant-free band edge shift in BiVO4 particles for photocatalysis under simulated sunlight irradiation

Abstract: Foreign elemental doping is a widely utilized strategy to modify the electronic-structure of semiconductors. Herein, we present a dopant-free novel synthesis approach to control the electronic-structure of a semiconductor. Utilizing...

Cited by 2 publications

References 69 publications

The effect of ionic liquids on the surface and photocatalytic properties of semiconducting materials

The effect of ionic liquids on the surface and photocatalytic properties of semiconducting materials

Triggering Synergy between p-Type Sputter-Deposited FeMnOx or FeNiOx and W-Doped BiVO4 for Enhanced Oxygen Evolution

Contact Info

Product

Resources

About

Ionic liquid based dopant-free band edge shift in BiVO₄ particles for photocatalysis under simulated sunlight irradiation

Triggering Synergy between p-Type Sputter-Deposited FeMnO_x or FeNiO_x and W-Doped BiVO₄ for Enhanced Oxygen Evolution