Ionizing dose hardness assurance methodology for qualification of a BiCMOS technology dedicated to high dose level applications

Abstract

This work concerns the development of a radiation hardness assurance methodology specially devoted to CMOS, JI'ET and bipolar transistors used in high total dose level environments. On the basis of recent studies, high tempe:rature, high dose rate irradiations were performed. We propose a test procedure which combines high temperature irradiations and isochronal anneals for the qualification. 0-7803-4071-X/98/$'10.00 0 1998 IEEE.