Ionizing Radiation Influence on Rubrene-Based Metal Polymer Semiconductors: Direct Information of Intrinsic Electrical Properties

Akay, Defne; Gökmen, Uğur; Ocak, Sema Bi̇lge

doi:10.1007/s11837-020-04156-x

Cited by 23 publications

(16 citation statements)

References 35 publications

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“…That is, the existence of N ss in the region between the interface layer and the semiconductor has an effect on the device’s capacitance–voltage and current–voltage measurements. The change in N ss energy can be plotted by using the following equations and the correct supply I – V data. − n ( V ) = q V / [ k T ⁡ ln true( I I 0 true) ] ⌀ normale = ⌀ BO + ( 1 − 1 n false( V false) ) V …”

Section: Resultsmentioning

confidence: 99%

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

Akay,

Seven,

Gökmen

et al. 2023

ACS Appl. Nano Mater.

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This study examines the high-frequency-dependent characteristics of the PbO/SnO 2 double-layer semiconductor (DLS) structures. Recently, researchers have been particularly interested in such structures in terms of their use in electrical and photovoltaic applications. A PbO/SnO 2 double layer was successfully coated on a p-type Si substrate (100) wafer with a resistance of 10 Ω cm and a thickness of 280 μm. The Al Schottky (round dot) connections, which have a thickness of 124 nm and a diameter of 1.3 mm, were produced by thermal evaporation. The present study proposes to measure the conductance−voltage (G−V) and capacitance−voltage (C−V) values of the studied Al/PbO/SnO 2 /p-Si Schottky diode for the frequencies of 500 kHz, 800 kHz, and 1 MHz at a temperature of 300 K, which has been suggested for the first time in literature. Due to the presence of surface states (N ss ), PbO/SnO 2 double-layer, and series resistance R s , the C−V and G−V plots show inversion, depletion, and accumulation zones depending on the strong frequency for each frequency tested. Based on the tested frequencies, the reverse-biased C 2 −V curves are used to compute the fundamental electrical characteristics of the Al/PbO/SnO 2 /p-Si structures, including the depletion layer (W D ), Fermi energy level (E F ), diffusion potential (V D ), and thickness barrier height (⌀ B ). We also investigated the capacitance features and the energy density distribution of surface states (N ss ) in the PbO/SnO 2 double-layer structure by utilizing the measured values of G−V and C−V. The values of ⌀ B , V D , and N ss were observed to be 0.54 0.34, and 3.19 10 12 eV −1 cm −2 at 500 kHz, while they were 0.88 0.68, and 1.96 eV −1 cm −2 at 800 kHz and 0.95, 0.75, and 1.47 eV −1 cm −2 at 1 MHz, respectively. It was discovered that the capacitance characteristics of the PbO/SnO 2 double-layer structure were substantially dependent on the applied high frequencies. Furthermore, the C−V and G−V measurements revealed that the series resistance and the interface state density of the studied Al/PbO/SnO 2 /p-Si Schottky diode were critical parameters that significantly affect the electrical parameters offered by the PbO/SnO 2 double-layer nanostructure. The results of the study reveal that the manufactured device exhibits outstanding electric characteristics and support the possibility of using DL thin films in electronic devices.

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Section: Resultsmentioning

confidence: 99%

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

Akay,

Seven,

Gökmen

et al. 2023

ACS Appl. Nano Mater.

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“…It is highly plausible that ionizing radiation can create defects within the semiconductor and traps at semiconductor-dielectric interface layer. Akay et al have elaborated that the defect centers have been introduced by ionizing radiation in the bulk of rubrene crystal which leads to fall in carrier mobility, however it is not applicable to all cases as per conclusion [92]. Very limited studies are available on EB induced implications on rubrene despite that high energy EB is very useful and non contact tool to modify the characteristics of organic materials.…”

Section: Rubrenementioning

confidence: 99%

Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films

et al. 2020

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Tailoring the characteristics of organic semiconductors including molecular semiconductor and conducting polymers is the frontline area of research for improving the performance of organic electronic devices. Electron beam treatment has been established as one of the easiest method in comparison to others like chemical doping, thermal processing, ozonolysis, UV and other ionizing radiation treatment, to tune the physico-chemical properties of organic semiconductors. High energy electron beam (EB) generated from an accelerators impinges energy to the material and causes several phenomena including doping, crosslinking, chain degradation, gas evolution, molecular structural modifications, oxidation and unsaturation. Such modifications lead to variation in electrical characteristics and consequently affect the overall device performances. In the present review we have focused on the different interaction processes of EB with organic semiconductors and its implications to tailor the performance of device comprising of it mainly gas sensors, field effect transistors, thermoelectric power generators and radiation dosimeters.

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“…Therefore, people are exposed to ionizing radiation due to radionuclides that naturally occur every day . All living organisms in the universe are composed of a kind of radioactive materials and the materials are affected by the different radiation dose. − Various geological formations, including some kinds of soils and rocks used in the construction of buildings, may contain materials that contain radionuclides of natural origin . Radioactive materials contain original terrestrial radionuclides, also known as primitive radionuclides, since the formation of the world, and they are present in various concentrations in the environment.…”

Section: Introductionmentioning

confidence: 99%

Natural Radioactivity Levels of the Beach Sands of Cleopatra Beach and Damlatas Beach (Türkiye) and Their Impact on Human Health

Unal,

Yalcin,

Bilge Ocak

2023

ACS Omega

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HPGe γ spectrometry method was used to measure the natural radioactivity levels ( 40 K, 232 Th, and 226 Ra) of the beach sand samples from Cleopatra Beach and Damlatas Beach in Antalya (Turkiye). The mean 40 K, 232 Th, and 226 Ra radioactivity levels of the studied samples were calculated as 276.88 ± 17.24, 25.04 ± 2.88, and 17.06 ± 1.68 Bq/kg, respectively. Being below the radiation limits, these values indicate no risk in terms of public health. Moreover, the radiological risk parameters, such as excess lifetime cancer risk, radium equivalent activity (Ra eq ), absorbed γ dose rate (D), annual effective dose equivalent (Ea ed ), γ index (I γ ), internal radiation hazard index (H in ), and external radiation hazard index (H ex ), were calculated. The values of all of these parameters were found to be below the internationally accepted radiation limit values. In addition, distribution maps showing the radiological situation of the region were generated although they did not pose a hazard to public health. No results were found in the analysis processes related to artificial radioactivity.

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Ionizing Radiation Influence on Rubrene-Based Metal Polymer Semiconductors: Direct Information of Intrinsic Electrical Properties

Cited by 23 publications

References 35 publications

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

Semiconducting Double-Layer Lead Monoxide Tin Oxide Nanostructures for Photodetectors

Electron Beam Induced Tailoring of Electrical Characteristics of Organic Semiconductor Films

Natural Radioactivity Levels of the Beach Sands of Cleopatra Beach and Damlatas Beach (Türkiye) and Their Impact on Human Health

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