Iron nitride thin films prepared by facing targets sputtering

Abstract

Articles you may be interested inPolycrystalline iron nitride films fabricated by reactive facing-target sputtering: Structure, magnetic and electrical transport properties J. Appl. Phys. 110, 053911 (2011); 10.1063/1.3636364 Mn-Zn spinel ferrite thin films prepared by high rate reactive facing targets sputtering J. Appl. Phys. 93, 7996 (2003); 10.1063/1.1555842 Magnetic anisotropy and soft magnetism of iron nitride thin films prepared by facingtarget sputtering

Thermal Stability of ??-Fe16N2 Thin Films Prepared by Facing-Target Sputtering

“…Believing that the Fe-N film was a polycrystalline mixture of Fe and a 00 -Fe 16 N 2 , they deduced that B s of a 00 -Fe 16 N 2 would be 2.83 T from the volume ratio of a 00 -Fe 16 N 2 in the film. Since the large saturated flux density is of importance, both theoretically and from the point of view of practical applications, many researchers have made great efforts using a variety of methods to synthesize a 00 -Fe 16 N 2 into bulk materials [2][3][4] and thin films [5][6][7][8][9][10].…”

Effects of Bias Voltage on Fen Films Prepared by Magnetron Sputtering

“…It was found that the α '' -Fe 16 N 2 phase is stable below 673 K and a slightly heated substrate will benefit the formation of α '' -Fe 16 N 2 [7,8] . Since the nitrogen is one of the key points to manipulate the phase compositions in the iron nitride films, the effect of nitrogen content are extensively studied 9,10 . However, there are few reports on the effect of bias voltage.…”

HIP SINTERING AND SATURATION MAGNETIZATION OF Fe4N

“…Therefore. the preparation of Fe 4N powder and the deposition of thin film have been widely studied [3][4][5]. The thin film is applicable to the magnetic recording head [6].…”