IV-VI Semimagnetic Semiconductors: Recent Developments

Synthesis and characterization of semimagnetic semiconductor Pb1−xSmxSe

“…3. All the samples are composed of single (rock salt) crystal phase with no second phase inclusions [20][21][22]. Our samples consist of few slightly disoriented monocrystalline grains.…”

Electrical and thermoelectric properties of PbSe doped with Sm

“…Since it is given as Pf = S 2 σ, where S is the Seebeck coefficient and σ is the electrical conductivity, it is carrier concentration dependant. Story [14] reported that IV-VI compounds allow for simple control of carrier concentration by means of doping and isothermal annealing. So, TE performance could be enhanced by optimizing both the doping and thermal treatment processes.…”

“…Many researchers reported that, doping IV-VI semiconductors with variable values of elements results in appearance of a range of unusual effects that are not characterizing the undoped material, [14,21,22]. In the past, only the group III elements (AL, Ga, In, and Tl) represented the impurities of IV-VI compounds.…”

Substructural Properties and Anisotropic Peak Broadening in Zn1−x Mn x Te Films Determined by a Combined Methodology Based on SEM, HRTEM, XRD, and HRXRD

“…Zn 1Àx Mn x Te is a ternary semiconductor (from now, ZnMnTe) that belongs to the group of diluted magnetic semiconducting alloys that have attracted much attention due to its semimagnetic character. [7] The partial substitution of the Zn cation by Mn results in a spÀd hybridization, giving rise to interesting magneto-optical and magneto-transport properties. [8] Among other growth methods, films of this ternary compound are mostly obtained by pulsed laser deposition, [9] flash evaporation, [10] high-frequency magnetron scattering, [11] or metalorganic vapor phase epitaxy.…”