Jellybean Quantum Dots in Silicon for Qubit Coupling and On‐Chip Quantum Chemistry

Wang, Zeheng; Feng, MengKe; Serrano, Santiago; Gilbert, W. S.; Leon, Ross C. C.; Tanttu, Tuomo; Mai, Philip; Liang, Dylan; Huang, Jonathan Y.; Su, Yue; Lim, Wee Han; Hudson, Fay E.; Escott, Christopher C.; Morello, Andrea; Yang, C. H.; Dzurak, Andrew S.; Saraiva, André; Laucht, Arne

doi:10.1002/adma.202208557

Cited by 8 publications

(1 citation statement)

References 62 publications

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“…[ 225 ] There is a “jellybean” QD in Si MOS devices that closely resembles this structure, but instead of being used as a qubit, it is used as an electron spin qubit–qubit coupler. [ 226 ] Therefore, the performance and scalability of this quasi‐1D structure as hole qubits in planar devices remain to be experimentally verified. In addition, the inseparable in‐plane and vertical confinement leads to the coupling of in‐plane and out‐of‐plane motion of the QDs.…”

Section: Engineering the Nanostructures And Operation Points For Bett...mentioning

confidence: 99%

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.

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Section: Engineering the Nanostructures And Operation Points For Bett...mentioning

confidence: 99%

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits

Stemp,

Asaad,

Blankenstein

et al. 2024

Nat Commun

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Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of universal one- and two-qubit gates in a system of two weakly exchange-coupled electrons, bound to single phosphorus donors introduced in silicon by ion implantation. We observe that the exchange interaction has no effect on the qubit coherence. We quantify the fidelity of the quantum operations using gate set tomography (GST), and we use the universal gate set to create entangled Bell states of the electrons spins, with fidelity 91.3 ± 3.0%, and concurrence 0.87 ± 0.05. These results form the necessary basis for scaling up donor-based quantum computers.

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Resonator-mediated quantum gate between distant charge qubits

Kayatz,

Mielke,

Burkard

2024

Quantum Sci. Technol.

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Strong charge-photon coupling allows the coherent coupling of a charge qubit, realized by a single charge carrier (either an electron or a hole) in a double quantum dot, to photons of a microwave resonator. Here, we theoretically demonstrate that, in the dispersive regime, the photons can mediate both an i SWAP gate as well as a i SWAP gate between two distant charge qubits. We provide a thorough discussion of the impact of the dominant noise sources, resonator damping and charge qubit dephasing on the average gate fidelity. Assuming a state-of-the art resonator decay rate and charge qubit dephasing rate, the predicted average gate fidelities are below 90%. However, a decrease of the charge qubit dephasing rate by one order of magnitude is conjectured to result in gate fidelities surpassing 95%.

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Jellybean Quantum Dots in Silicon for Qubit Coupling and On‐Chip Quantum Chemistry

Cited by 8 publications

References 62 publications

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits

Resonator-mediated quantum gate between distant charge qubits

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