Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS

Deura, Momoko; Shimogaki, Yukihiro; Nakano, Yoshiaki; Sugiyama, Masakazu

doi:10.1016/j.jcrysgro.2008.08.019

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…Multinary epilayers may be used as active parts of the device (such as InGaAsP‐based absorbers), as barrier layers to tune the band alignment, or simply as transition layers, for instance, to bridge lattice mismatch between two materials by graded buffers . It is often useful to study constituents of multinary compounds individually . For multinary compounds, optical real‐time analysis can contribute to “control of thickness and stoichiometry during growth as well as monitoring the switching procedures during the growth of heterostructures.” For example, the MOVPE growth of entire laser and MJSC structures can be monitored in situ with RAS .…”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

View full text Add to dashboard Cite

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GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

Kim

Toprasertpong

Paszuk

et al. 2018

Solar Energy Materials and Solar Cells

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Growth far from equilibrium: Examples from III-V semiconductors

Kuech

Babcock

Mawst

2016

Applied Physics Reviews

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The development of new applications has driven the field of materials design and synthesis to investigate materials that are not thermodynamically stable phases. Materials which are not thermodynamically stable can be synthesized and used in many applications. These materials are kinetically stabilized during use. The formation of such metastable materials requires both an understanding of the associated thermochemistry and the key surface transport processes present during growth. Phase separation is most easily accomplished at the growth surface during synthesis where mass transport is most rapid. These surface transport processes are sensitive to the surface stoichiometry, reconstruction, and chemistry as well as the growth temperature. The formation of new metastable semiconducting alloys with compositions deep within a compositional miscibility gap serves as model systems for the understanding of the surface chemical and physical processes controlling their formation. The GaAs1−yBiy system is used here to elucidate the role of surface chemistry in the formation of a homogeneous metastable composition during the chemical vapor deposition of the alloy system.

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Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS

Cited by 4 publications

References 15 publications

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

Growth far from equilibrium: Examples from III-V semiconductors

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