Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

Brzhezinskaya, M. M.; Kapitanova, Olesya O.; Кононенко, О. В.; Koveshnikov, S.; Korepanov, Vitaly I.; Рощупкин, Д. В.

doi:10.1016/j.jallcom.2020.156699

Cited by 37 publications

(17 citation statements)

References 63 publications

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“…Table 1 ). The characteristics of the D and G peaks provide information about the graphene quality [ 13 , 43 , 44 , 45 ] and the crystal size [ 46 , 47 , 48 ], where the D peak is related to the defect and disorder of the sp 2 carbon network [ 13 , 24 , 43 , 44 ]. The D/G intensity ratio was used to obtain information about the defect level in the films, where high values were associated with a more defective structure [ 24 ].…”

Section: Resultsmentioning

confidence: 99%

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

et al. 2022

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The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.

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Section: Resultsmentioning

confidence: 99%

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

et al. 2022

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“…Raman spectroscopy was used to estimate the degree of reduction of GO and to define structural differences between GO and RGO. Raman spectroscopy has been proven to be useful for detailed research description of graphene materials [ 27 , 28 ]. The Raman spectrum of carbon materials contains bands marked as D and G. The D band (located near 1350 cm −1 ) results from the presence of vacancies or dislocations in the graphene layer and at the edge of this layer.…”

Section: Resultsmentioning

confidence: 99%

Flake Graphene as an Innovative Additive to Grease with Improved Tribological Properties

et al. 2022

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The paper presents the results of research on the use of flake graphene as an additive to plastic grease in order to improve its tribological properties. The influence of concentration (0.25–5.00 wt.%) and the form of graphene (graphene oxide, reduced graphene oxide) on selected properties of the base grease were investigated. It has been found that the addition of graphene flakes improves the anti-wear properties of the lubricant. The greatest improvement in the properties of the lubricant was achieved by using graphene at a concentration of 4.00 wt.%; the reduction in the average diameter of the wear scar was almost 70% for GO and RGO, compared to the base lubricant without the addition of graphene.

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“…No broadening of the C 1 s -π* (C=C) resonance is indicated, which is commonly observed in the case of the presence of localized sp 2 -domains of varied dimensions having a diverse conjugation length [ 12 , 49 ]. Conversely, the evolution of the C 1 s -π* resonance is accompanied by the appearance of the σ*-exciton resonance centered at hv = 291.65 eV, which is a common sign of the complete recuperation of the extended conjugated domains of the graphene network [ 50 , 51 ]. At the same time, the C 1 s -π* resonances of the edge-located hydroxyls at hv = 286.2 eV [C 1 s -π* (C-OH(e))] and ketones/carboxyl groups at hv = 288.2 eV (C 1 s -π* (C=O, COOH)) disappear or diminish, verifying the elimination of the oxygen groups indicated by the XPS studies.…”

Section: Resultsmentioning

confidence: 99%

A Blueprint for the Synthesis and Characterization of Thiolated Graphene

et al. 2021

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Graphene derivatization to either engineer its physical and chemical properties or overcome the problem of the facile synthesis of nanographenes is a subject of significant attention in the nanomaterials research community. In this paper, we propose a facile and scalable method for the synthesis of thiolated graphene via a two-step liquid-phase treatment of graphene oxide (GO). Employing the core-level methods, the introduction of up to 5.1 at.% of thiols is indicated with the simultaneous rise of the C/O ratio to 16.8. The crumpling of the graphene layer upon thiolation without its perforation is pointed out by microscopic and Raman studies. The conductance of thiolated graphene is revealed to be driven by the Mott hopping mechanism with the sheet resistance values of 2.15 kΩ/sq and dependable on the environment. The preliminary results on the chemiresistive effect of these films upon exposure to ethanol vapors in the mix with dry and humid air are shown. Finally, the work function value and valence band structure of thiolated graphene are analyzed. Taken together, the developed method and findings of the morphology and physics of the thiolated graphene guide the further application of this derivative in energy storage, sensing devices, and smart materials.

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Large-scalable graphene oxide films with resistive switching for non-volatile memory applications

Cited by 37 publications

References 63 publications

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

Flake Graphene as an Innovative Additive to Grease with Improved Tribological Properties

A Blueprint for the Synthesis and Characterization of Thiolated Graphene

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