Large Scale Graphene/Hexagonal Boron Nitride Heterostructure for Tunable Plasmonics

Abstract

Vertical integration of hexagonal boron nitride (h‐BN) and graphene for the fabrication of vertical field‐effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi‐metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio‐frequency plasma chemical vapor deposition, wafer scale, high quality few layer h‐BN films are successfully grown. By using few layer h‐BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h‐BN vertically stacked micrometer‐sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h‐BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer.

Graphene plasmonics: physics and potential applications

“…Experimentally, optical measurements of graphene terahertz plasmons utilized microstructures, such as graphene micro-ribbons [14](Figure1A) and micro-disks [15,47] which has been demonstrated by Ju et al [14]. This is the same as plasmons in a traditional 2D electron gas.…”

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

“…Since the isolation of graphene on an insulating substrate [1][2][3][4][5][6][7] , a variety of other layered materials have been isolated and characterized, and have opened up an exciting field of research [8][9][10][11] . However the electronic quality of two-dimensional (2D) active layers in devices is highly sensitive to their immediate environment owing to the large surface to volume ratio.…”

Facile Synthesis of Highly Crystalline and Large Areal Hexagonal Boron Nitride from Borazine Oligomers

“…The inset in Fig. 2(d) is the SAED pattern collected from the h-BN film, and it clearly showed hexagonal lattice structure, representing the Bernal or turbostratic stacking configuration25. A high resolution TEM image (Fig.…”