Laser induced sponge-like Si in Si-rich oxides for photovoltaics

Three-dimensional nanocomposite networks consisting of percolated Si nanowires in a SiO2 matrix, Si:SiO2, were studied. The structures were obtained by reactive ion beam sputter deposition of SiOnormalx (x ≈ 0.6) thin films at 450 ∘C and subsequent crystallization using conventional oven, as well as millisecond line focus laser treatment. Rutherford backscattering spectrometry, Raman spectroscopy, X-ray diffraction, cross-sectional and energy-filtered transmission electron microscopy were applied for sample characterization. While oven treatment resulted in a mean Si wire diameter of 10 nm and a crystallinity of 72% within the Si volume, almost single-domain Si structures of 30 nm in diameter and almost free of amorphous Si were obtained by millisecond laser application. The structural differences are attributed to the different crystallization processes: conventional oven tempering proceeds via solid state and millisecond laser application via liquid phase crystallization of Si. The five orders of magnitude larger diffusion constant in the liquid phase is responsible for the three-times larger Si nanostructure diameter. In conclusion, laser treatment offers not only significantly shorter process times, but moreover, a superior structural order of nano-Si compared to conventional heating.

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“…Friedrich et al [ 18 ] and Ilday et al [ 19 ] used physical vapor deposition to obtain

. Chemical vapor deposition was used by Gundogdu et al [ 20 ] for SiO

layer fabrication.…”

Section: Introductionmentioning

confidence: 99%

Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films

et al. 2018

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“…[10] and Ilday et al [11] used physical vapour deposition to obtain SiO x≈1 . Chemical vapour deposition was used by Gundogdu et al [12] for SiO 0.8 layer fabrication.…”

Section: Introductionmentioning

confidence: 99%

Percolated Si:SiO2 Nanocomposites: Oven- vs.Millisecond Laser-induced Crystallization of SiOx Thin Films

Schumann

Hübner

Grenzer

et al. 2018

Preprint

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Three-dimensional nanocomposite networks consisting of percolated Si nanowires in a SiO2 matrix, Si:SiO2, were studied. The structures were obtained by reactive ion beam sputter deposition of SiOx (x ≈ 0.6) thin films at 450 °C and subsequent crystallization using conventional oven as well as millisecond line focus laser annealing. Rutherford backscattering spectrometry, Raman spectroscopy, X-ray diffraction, cross-sectional and energy-filtered transmission electron microscopy were applied for sample characterization. While oven annealing resulted in a mean Si wire diameter of 10 nm and a crystallinity of 72 % within the Si volume, almost single-domain Si structures with 30 nm in diameter and almost free of amorphous Si were obtained by millisecond laser application. The structural differences are attributed to the different crystallization processes: Conventional oven tempering proceeds via solid state, millisecond laser application via liquid phase crystallization of Si. The 5 orders of magnitude larger diffusion constant in the liquid phase is responsible for the three times larger Si nanostructure diameter. In conclusion, laser annealing offers not only significantly shorter process times but moreover a superior structural order of nano-Si compared to conventional heating.

show abstract

Laser induced sponge-like Si in Si-rich oxides for photovoltaics

Cited by 2 publications

References 38 publications

Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films

Percolated Si:SiO2 Nanocomposites: Oven- vs. Millisecond Laser-Induced Crystallization of SiOx Thin Films

Percolated Si:SiO<sub>2</sub> Nanocomposites: Oven- vs.Millisecond Laser-induced Crystallization of SiO<em><sub>x</sub></em> Thin Films

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