Latent heat effect on growth rate in the traveling liquidus-zone method

High Quality InxGa1-xAs (x: 0.08 – 0.13) Crystal Growth for Substrates of λ= 1.3 μm Laser Diodes by the Travelling Liquidus-Zone Method

“…Thus, TLZ growth model was confirmed by growth experiments at various sample translation rates and comparison of compositional profiles with those obtained by numerical analyses. Latent heat effect on growth rate was also investigated by numerical analysis and the effect is shown to be negligibly small except for end menber region (Adachi et al, 2004b).…”

Numerical analysis of two-dimensional model of the traveling liquidus-zone method

“…Unfortunately, it is still difficult to obtain homogeneous bulk crystals, hence we developed a new technique named the traveling liquidus-zone (TLZ) method [8,9]. The TLZ method is one of the solution zone growth techniques [11]. In solution growth, the growth rate is dominated by a gradient of solute concentration.…”