2012
DOI: 10.1016/j.ssi.2012.10.007
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Lattice distortion effect on electrical properties of GDC thin films: Experimental evidence and computational simulation

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Cited by 26 publications
(32 citation statements)
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“…From ab initio calculation results, higher activation energy for oxygen ion migration in stressed GDC thin films was expected by considering the consequential atomic positions, bonding lengths, and angles in the stressed ceria lattice. The calculated activation energies at different dilative strain values in the lateral direction were agreed with the experimental results [193].…”
Section: Gadolinia-doped Ceriasupporting
confidence: 83%
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“…From ab initio calculation results, higher activation energy for oxygen ion migration in stressed GDC thin films was expected by considering the consequential atomic positions, bonding lengths, and angles in the stressed ceria lattice. The calculated activation energies at different dilative strain values in the lateral direction were agreed with the experimental results [193].…”
Section: Gadolinia-doped Ceriasupporting
confidence: 83%
“…The Arrhenius plots and activation energy as a function of film thickness of the samples are shown in Fig. 6.14 [193]. The oxygen partial pressure measurements confirmed that the conductivities of these samples are pure ionic.…”
Section: Gadolinia-doped Ceriamentioning
confidence: 68%
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“…Crystallographically narrow coherent EC b /SE-AdSIC heterojunctions with the variation of  value ~0.5eV/nm for which stresses and corresponding deformations spread from the boundary to a distance not longer than several lattice parameters [29,30].…”
Section: Objects and Conditions Of Computer Experimentsmentioning
confidence: 99%