Lattice location study of implanted In in Ge

Decoster, Stefan; Vries, Bart de; Wahl, Ulrich; Correia, J. G.; Vantomme, André

doi:10.1063/1.3110104

Cited by 29 publications

(29 citation statements)

References 25 publications

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“…Lattice location studies of implanted In in Ge show that the major fraction of In is located on substitutional site and evidence on the formation of InV pairs are found. [35][36][37][38][39][40][41][42] Altogether, as far as atomic diffusion is concerned, the intrinsic and extrinsic diffusion of In in Ge mainly yield information about the charge state of InV and the reduced diffusion coefficient D In ‫ء‬ . Modeling of In diffusion also yields the corresponding profiles of InV pairs and vacancies.…”

Section: B Motivation Of Diffusion Model and Numerical Simulationsmentioning

confidence: 99%

Intrinsic and extrinsic diffusion of indium in germanium

Kube

Bracht

Chroneos

et al. 2009

Journal of Applied Physics

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Diffusion experiments with indium ͑In͒ in germanium ͑Ge͒ were performed in the temperature range between 550 and 900°C. Intrinsic and extrinsic doping levels were achieved by utilizing various implantation doses. Indium concentration profiles were recorded by means of secondary ion mass spectrometry and spreading resistance profiling. The observed concentration independent diffusion profiles are accurately described based on the vacancy mechanism with a singly negatively charged mobile In-vacancy complex. In accord with the experiment, the diffusion model predicts an effective In diffusion coefficient under extrinsic conditions that is a factor of 2 higher than under intrinsic conditions. The temperature dependence of intrinsic In diffusion yields an activation enthalpy of 3.51 eV and confirms earlier results of Dorner et al. ͓Z. Metallk. 73, 325 ͑1982͔͒. The value clearly exceeds the activation enthalpy of Ge self-diffusion and indicates that the attractive interaction between In and a vacancy does not extend to third nearest neighbor sites which confirms recent theoretical calculations. At low temperatures and high doping levels, the In profiles show an extended tail that could reflect an enhanced diffusion at the beginning of the annealing.

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Section: B Motivation Of Diffusion Model and Numerical Simulationsmentioning

confidence: 99%

Intrinsic and extrinsic diffusion of indium in germanium

Kube

Bracht

Chroneos

et al. 2009

Journal of Applied Physics

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“…The resulting anisotropic electron emission patterns around low-index crystal directions are characteristic for the lattice site occupied by the emitting atom and are measured with a two-dimensional energy-and position-sensitive Si detector of 22ϫ 22 pixels. This technique has been successfully applied previously, determining the lattice location of a range of impurities in several single crystalline matrices, including Ge, [14][15][16][17] reaching an unprecedented accuracy as low as 0.1 Å for very low impurity concentrations ͑Ͻparts per million͒. More details on EC can be found in Ref.…”

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confidence: 99%

Diluted manganese on the bond-centered site in germanium

Decoster

Cottenier

Wahl³

et al. 2010

Applied Physics Letters

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The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.

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“…During the last five years the EC experiments focused on the lattice location of dopants and impurities in Si [28][29], ZnO [30][31][32][33], GaN [34][35], AlN [36] and, most recently, also in Ge. In Ge, besides the preferred substitutional sites, up to now the following impurities were found to occupy the so-called bond-center (BC) site: Er [37], In [38], the transition metals Fe, Cu and Ag [39], and Sn [40]. By means of investigating the formation energy of defect complexes with the help of density functional theory, the BC location was identified as foreign atoms inside a double vacancy.…”

Section: Emission Channelingmentioning

confidence: 99%

Materials science and biophysics applications at the ISOLDE radioactive ion beam facility

Wahl

2011

Nuclear Instruments and Methods in Physics Research Section B:

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The ISOLDE isotope separator facility at CERN provides a variety of radioactive ion beams, currently more than 800 different isotopes from ~65 chemical elements. The radioisotopes are produced on-line by nuclear reactions from a 1.4 GeV proton beam with various types of targets, outdiffusion of the reaction products and, if possible, chemically selective ionisation, followed by 60 kV acceleration and mass separation. While ISOLDE is mainly used for nuclear and atomic physics studies, applications in materials science and biophysics account for a significant part (currently ~15%) of the delivered beam time, requested by 18 different experiments. The ISOLDE materials science and biophysics community currently consists of ~80 scientists from more than 40 participating institutes and 21 countries. In the field of materials science, investigations focus on the study of semiconductors and oxides, with the recent additions of nanoparticles and metals, while the biophysics studies address the toxicity of metal ions in biological systems. The characterisation methods used are typical radioactive probe techniques such as Mössbauer spectroscopy, perturbed angular correlation, emission channeling, and tracer diffusion studies. In addition to these "classic" methods of nuclear solid state physics, also standard semiconductor analysis techniques such as photoluminescence or deep level transient spectroscopy profit from the application of radioactive isotopes, which helps them to overcome their chemical "blindness" since the nuclear half life of radioisotopes provides a signal that changes in time with characteristic exponential decay or saturation curves. In this presentation an overview will be given on the recent research activities in materials science and biophysics at ISOLDE, presenting some of the highlights during the last five years, together with a short outlook on the new developments under way.

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Lattice location study of implanted In in Ge

Cited by 29 publications

References 25 publications

Intrinsic and extrinsic diffusion of indium in germanium

Intrinsic and extrinsic diffusion of indium in germanium

Diluted manganese on the bond-centered site in germanium

Materials science and biophysics applications at the ISOLDE radioactive ion beam facility

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