Lead-based and lead-free ferroelectric ceramic capacitors for electrical energy storage

Palneedi, Haribabu; Peddigari, Mahesh; Upadhyay, Alka; Silva, José; Hwang, Geon‐Tae; Ryu, Jungho

doi:10.1016/b978-0-08-102802-5.00009-1

Cited by 16 publications

(23 citation statements)

References 242 publications

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“…There is a significant difference in the energy storage density, power density, and the charge–discharge time of batteries, electrochemical capacitors (i.e., supercapacitors), and dielectric capacitors. , Among them, dielectric capacitors realize ES via a physical charge-displacement mechanism, with ultrahigh power density (MW kg –1 ) and higher operation voltages than electrochemical capacitors, , where the electrolytes are unstable at higher voltages …”

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confidence: 99%

“…The ESD of a dielectric is determined by two factors: the polarization ( P ) induced by the external electric field ( E ) and the highest sustainable E in the dielectric (also denoted as dielectric breakdown field, E BD ), as given by the equation ESD = ∫ P r P m E d P , where P m and P r are the maximum and remnant polarization, respectively. , Moreover, the ES efficiency of the capacitor is quantified by the ratio between the recoverable energy density ( U rec ) and the stored energy density ( U st ), as given by the equation η = . , …”

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confidence: 99%

“…To achieve high ESD and for a dielectric to be stable at high temperatures, to obtain superior ES performance, it is important to aim for a low coercive field E c , high P m , low P r , large E BD , slim hysteresis, and low leakage current. , …”

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Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

et al. 2021

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Among currently available energy storage (ES) devices, dielectric capacitors are optimal systems owing to their having the highest power density, high operating voltages, and a long lifetime. Standard highperformance ferroelectric-based ES devices are formed of complexcomposition perovskites and require precision, high-temperature thinfilm fabrication. The discovery of ferroelectricity in doped HfO 2 in 2011 at the nanoscale was potentially game-changing for many modern technologies, such as field effect transistors, non-volatile memory, and ferroelectric tunnel junctions. This is because HfO 2 is a well-established material in the semiconductor industry, where it is used as a gate dielectric. On the other hand, (pseudo)binary HfO 2 and ZrO 2 -based materials have received much less attention for ES capacitors, even though antiferroelectric HfO 2 and ZrO 2 -based thin films show strong promise. This Focus Review summarizes the current status of conventional polymer and perovskite ferroic-based ES. It then discusses recent developments in, and proposes new directions for, antiferroelectric and ferroelectric group IV oxides, namely HfO 2 and ZrO 2 -based thin films.

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Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

et al. 2021

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“…The traditional capacitors are preferred, where storage and quick power release is required, and power delivery and liftoff of 196 k Wkg −1 occurs in just a few seconds [ 119 ]. On the other hand, supercapacitors have higher specific energy (10.1 Wh/kg) as compared to electrostatic capacitors (6 Wh/kg) [ 120 ]. The supercapacitor has alluring features, such as higher values of movement of energy per unit area and a brisk charge/discharge procedure; this is also a reliable constant source of power.…”

Section: Electrical Energy Storage Classificationmentioning

confidence: 99%

Review on Comparison of Different Energy Storage Technologies Used in Micro-Energy Harvesting, WSNs, Low-Cost Microelectronic Devices: Challenges and Recommendations

Riaz

Sarker

Saad

et al. 2021

Sensors

141

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This paper reviews energy storage systems, in general, and for specific applications in low-cost micro-energy harvesting (MEH) systems, low-cost microelectronic devices, and wireless sensor networks (WSNs). With the development of electronic gadgets, low-cost microelectronic devices and WSNs, the need for an efficient, light and reliable energy storage device is increased. The current energy storage systems (ESS) have the disadvantages of self-discharging, energy density, life cycles, and cost. The ambient energy resources are the best option as an energy source, but the main challenge in harvesting energy from ambient sources is the instability of the source of energy. Due to the explosion of lithium batteries in many cases, and the pros associated with them, the design of an efficient device, which is more reliable and efficient than conventional batteries, is important. This review paper focused on the issues of the reliability and performance of electrical ESS, and, especially, discussed the technical challenges and suggested solutions for ESS (batteries, supercapacitors, and for a hybrid combination of supercapacitors and batteries) in detail. Nowadays, the main market of batteries is WSNs, but in the last decade, the world’s attention has turned toward supercapacitors as a good alternative of batteries. The main advantages of supercapacitors are their light weight, volume, greater life cycle, turbo charging/discharging, high energy density and power density, low cost, easy maintenance, and no pollution. This study reviews supercapacitors as a better alternative of batteries in low-cost electronic devices, WSNs, and MEH systems.

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“…Hafnium dioxide (HfO 2 ), niobium pentoxide (Nb 2 O 5 ), and zinc oxide (ZnO) are some of the high-K dielectrics that have attracted much attention in micro M-I-M structures to obtain large storage cell capacitance because they provide strong electric breakdown strength and extremely low leakage current [10]- [13]. However, as the size of the devices shrinks, achieving these properties becomes more challenging.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Leakage Current in Micro M-I-M Structure Using Multilayer High-K Dielectric Materials with COMSOL Multiphysics

Ullah

Huang

Amirzada

et al. 2022

ELEKTRON ELEKTROTECH

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Micro Metal-Insulator-Metal (M-I-M) capacitor structures are well-known passive components that have been broadly used in integrated circuits, Radio Frequency (RF) decoupling, Micro Electro Mechanical Systems (MEMS) sensors, and health monitoring systems. Thanks to its small dimensions, it can be easily integrated into microelectronics. With the acceleration of the scalling dawn of integrated circuits and systems, the size of the capacitor and other components must be reduced. It has become challenging to fabricate a micro M-I-M capacitor with low leakage current and high-capacity density since the leakage current and depletion effect are reported as the main factors of the gradual loss of electrical energy in the micro-M-I-M capacitor. Thus, minimizing the leakage current and the depletion effect became a new research trend. This paper presents a penta-layer high-K dielectric between the electrodes to reduce the leakage current in the micro-M-I-M capacitor. For this purpose, various dielectric materials were investigated. It was found that niobium pentaoxide (Nb2O5) and hafnium dioxide (HfO2) as penta-layer dielectric materials provide the lowest leakage current between the two electrodes. The recorded values of leakage current density are reduced to a mere 0.95 µAmps/mm2 from several µAmps/mm2 at the operating voltage of 1 V. The reported micro-M-I-M capacitor has potential application as an energy storage device.

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Lead-based and lead-free ferroelectric ceramic capacitors for electrical energy storage

Cited by 16 publications

References 242 publications

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

Review on Comparison of Different Energy Storage Technologies Used in Micro-Energy Harvesting, WSNs, Low-Cost Microelectronic Devices: Challenges and Recommendations

Investigation of Leakage Current in Micro M-I-M Structure Using Multilayer High-K Dielectric Materials with COMSOL Multiphysics

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