LED and Phototransistor Simulation

Abstract

Optoelectronics (e.g., light-emitting diodes, photodetectors) is one of the most widely used fields nowadays. But it is still necessary to improve their characteristics for using in general lighting. In this chapter, the heterostructure conductivity type, impurity and indium atoms influence on the LEDs and phototransistor characteristics are investigated by computer simulation. It was found that current-voltage characteristic and quantum efficiency depend on impurity and indium atoms change a lot. By varying impurity and indium atom concentration, controlling their distribution in InGaN and AlGaP heterostructure LEDs and photodetector characteristics can be improved.

A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications

“…Losev's findings laid the groundwork for the development of modern LED lights, which have entered widespread use in everyday items like lamps and screens. Additionally, Losev's thorough investigation into injectional and prebreak down luminescence effects contributed significantly to the field, which led to in his receipt of the first patent for a pre-sample to the light-emitting diode in 1927 [3]. Oleg Vladimirovich Losev, an influential Russian scientist, played a pivotal role in advancing semiconductor electronics through his discovery of electroluminescence [2].…”