Lensless Short-Range Reflection-Mode Imaging at 275 GHz Using CMOS Concurrent Transceivers

Byreddy, Pranith R.; Sosa, Walter E.; Zhu, Yukun; Chen, Zhiyu; Pouya, Behnam; Choi, Wooyeol; O, Kenneth. K.

doi:10.1109/lsens.2023.3239804

Cited by 3 publications

(2 citation statements)

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“…A pair of concurrent transceiver pixels operating at ∼275 GHz fabricated in 65 nm CMOS was also used to form images of targets ∼1 cm away with and without a cardboard cover. 103 The imaging module, demonstration setup, and images are shown in Figure 4. This suggests that SMMW imagers can be integrated into a form factor consistent with that of smartphones.…”

Section: Sub-millimeter Wave Systemsmentioning

confidence: 99%

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Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Choi,

2024

ACS Photonics

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Over the past 15 years, the output power of silicon submillimeter-wave electronics has increased by a factor greater than 1000 reaching −3.9 dBm at 440 GHz for a single unit in CMOS and −10.7 dBm at 1.01 THz for a 42-element array in SiGe BiCMOS. The smallest power of a 1 kHz bandwidth signal at 420 GHz that can be detected has improved by 100 million times. These and the expected improvements from the ongoing activities should be sufficient to support high resolution imaging with a range of up to several hundred meters, gas sensing up to ∼1 THz, and communication over ∼1000 m. The silicon IC technologies enable integration of complex systems into a small form factor and reduction of manufacturing cost. When broad deployment of submillimeter wave systems for everyday life applications becomes necessary, the silicon IC infrastructure will be the most capable to support the high-volume manufacturing need.

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Section: Sub-millimeter Wave Systemsmentioning

confidence: 99%

“…(a) PCB and imaging setup, (b) visual image of targets, (c) imaging experiment setups without and with a cardboard cover, (d) image taken without a cover, and (e) image taken with a cover. Reprinted with permission from ref . Copyright 2023 IEEE.…”

Section: Applications For Silicon Integrated Sub-millimeter Wave Systemsmentioning

confidence: 99%

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Choi,

2024

ACS Photonics

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Perspective on active submillimeter electromagnetic wave imaging using CMOS integrated circuits technologies

Choi

Han

2023

Journal of Applied Physics

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The performance of CMOS transmitters and receivers operating at the submillimeter electromagnetic wave frequencies have sufficiently improved for use in active transmission and reflection-mode imaging applications that have the potential for broad deployment and utilization. Imaging integrated circuits have the potential to be large in area to support a high number of pixels along with digital backend processing circuits. For high volume imaging applications that may eventually be included in automobiles, smartphones, laptops, tablets, and others, a large manufacturing capacity to support the volume of large area ICs is necessary. For this, the use of CMOS technologies with a much larger manufacturing capacity is favored. It should be possible to improve the performance of CMOS circuits to increase the range, and operation margin and frequency. The electronically steerable submillimeter-wave reflector technology holds the promise for improving the performance and energy efficiency of submillimeter-wave imaging systems by multiple orders of magnitude, and it is a critical research area. Increasing the operating frequency from 430 to 850 GHz using CMOS integrated circuits to improve the angular resolution by 2X at a given form factor (∼0.15° for a reflector diameter of 15 cm) can make the submillimeter-wave imaging competitive to the LIDAR angular-resolution performance, while providing superior capabilities in visually impaired conditions and making the imaging devices more affordable.

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Array of 296-GHz CMOS Concurrent Transceiver Pixels With Phase and Amplitude Extraction Circuits for Improving Reflection-Mode Imaging Resolution

Byreddy,

Zhu,

Ghosh

et al. 2024

IEEE Trans. THz Sci. Technol.

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Lensless Short-Range Reflection-Mode Imaging at 275 GHz Using CMOS Concurrent Transceivers

Cited by 3 publications

References 18 publications

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits

Perspective on active submillimeter electromagnetic wave imaging using CMOS integrated circuits technologies

Array of 296-GHz CMOS Concurrent Transceiver Pixels With Phase and Amplitude Extraction Circuits for Improving Reflection-Mode Imaging Resolution

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