Light emission from a polymer transistor

Abstract

We report on light emission from a polymeric transistor that utilizes interdigitated source and drain electrodes with channel length of 5 μm in a bottom gate configuration based on a Si/SiO2 substrate. The polymer investigated is poly[9,9-di(ethylhexyl)fluorene] deposited by spin coating from chloroform solution to achieve an active layer thickness of 40 nm. Light emission occurs above drain source voltages of −60 V and the light intensity can be controlled by the gate voltage. Emission occurs close to the drain electrode as determined by optical microscopy. The transistor operates in hole accumulation mode without saturation of the output characteristics.

Near‐Infrared Light‐Emitting Ambipolar Organic Field‐Effect Transistors

“…As a consequence light emission occurs only at the interface between the semiconductor and the minority-carrier injecting electrode. [3][4][5][6][7][8] Only recently light emission from within the transistor channel was demonstrated in ambipolar OFETs (i.e., capable of transporting both holes and electrons). [9][10][11][12][13][14] In an ambipolar LEOFET when the gate is biased in between the source and drain potentials, holes and electrons are injected simultaneously at the opposite ends of the channel.…”

High performance light emitting transistors

“…Organic light emitting field-effect transistors [1][2][3] ͑LEFETs͒ are attracting interest due to a number of applications such as simplified pixels in flat panel displays, optoelectronic devices in communications, and potentially electrically driven lasers. A LEFET combines the emission properties of an organic light-emitting diode ͑OLED͒ with the switching properties of a transistor in a single device structure.…”

Multilayer Approach in Light-Emitting Transistors

“…In the same year, Omayada et al showed also a new single layer unipolar OLET with an EQE of almost 0.8%, made with a blend of 1wt%-rubrene doped tetraphenylpyrene (TPPy) (Omayada et al, 2005b). Other studies have been done using spin-coated or drop-casted polymers like polyphenylenevinylene, poly-fluorene or poly-arylenevinylene derivatives (Sakanoue et al, 2004;Ahles et al, 2004;Swensen et al, 2005a) as active layer. These experiments, besides showing a possible extension of the concept of unipolar OLET, demonstrated the feasibility of wet-technique fabrication process that could open up many possibilities of large-area and low cost devices.…”