Light Emission from Tunnel Junctions

Mills, D. L.; Weber, M.; Laks, Bernardo

doi:10.1007/978-1-4684-1152-2_5

Cited by 12 publications

(8 citation statements)

References 26 publications

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“…Among these were the roughening of the junction electrodes − and the use of metal nanoparticles, ,,− both of which facilitate mode conversion through random scattering. However, as each scattering event carries the possibility for absorption, outcoupling efficiencies were found to saturate with increasing roughness. ,, In an alternative approach, tunnel junctions were fabricated on top of gratings − in order to “impedance-match” the modes of the tunnel junctions to free-space (cf. Figure a).…”

Section: Mode Propagation and Outcouplingmentioning

confidence: 99%

“…The excitation of optical modes by quantum tunneling, more specifically inelastic electron tunneling (IET), has been investigated for four decades. After the initial discovery by Lambe and McCarthy in 1976, IET was studied in (laterally) macroscopic metal–insulator–metal (MIM) devices . Toward the end of the 1980s, IET was rediscovered in the scanning tunneling microscopy (STM) community with the observation of light emission from an STM junction , and evolved into a spectroscopic tool. − Most recently, with the advancement of the optical antenna concept, , renewed interest in IET as a means to electrically excite propagating and localized surface plasmon polariton (SPP) modes emerged. , In contrast to radio- and microwave antennas, optical antennas are generally excited by light.…”

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confidence: 99%

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Light at the End of the Tunnel

Parzefall

Novotny

2018

ACS Photonics

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In recent years, tunnel junctions have reemerged as promising candidates for the transduction of electrical to optical signals at the nanoscale. The process of interest is known as inelastic electron tunneling (IET), where a tunneling electron excites an optical mode while traversing the tunnel barrier. The main appeal of tunnel junctions lies in their size and bandwidth, both of which are unmatched by other electronic devices. However, their main disadvantage so far has been the overall low transduction efficiency. Recently, the realization of photon and surface plasmon polariton (SPP) sources based on IET, with efficiencies exceeding 1%, were reported. In this perspective, we critically analyze the factors that limit efficiencies and extract guidelines for the development of efficient photon and SPP sources.

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Section: Mode Propagation and Outcouplingmentioning

confidence: 99%

mentioning

confidence: 99%

Light at the End of the Tunnel

Parzefall

Novotny

2018

ACS Photonics

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“…[8,11] The SPP can be extracted by the roughness of interface (such as cermet/GaN interface). [11,29,30] However, the SPP extraction efficiency is not high enough because of the absorption of metal or metal-like layer. By inserting a layer of low refractive index between the cermet layer and GaN layer, the absorption of SPP will be effectively suppressed and hence the SPP extraction efficiency can be largely improved.…”

Section: Optimized Samplementioning

confidence: 99%

Tunable Emission Enhancement in Surface Plasmon‐Enhanced GaN Light‐Emitting Diode Based on the Ag–SiO₂ (Ag‐Rich) Cermet Material

Zhang,

Ma,

Wang

et al. 2023

Physica Status Solidi (a)

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The metal‐dielectric cermet (metal rich) material is utilized for turning the dispersion properties of surface‐plasmon in GaN‐LED. The designed structure contains a cermet layer coated on p‐GaN layer. The optimized ingredients in the cermet material and thickness of the cermet layer are obtained by the simulations. For enhancing the extraction of surface‐plasmon, the designed structure is further optimized by inserting a layer of low refractive index. The calculated results indicate that the Purcell factor in optimized structure is greater than 100 over the emission spectrum and the extraction efficiency of surface‐plasmon is effectively improved. The models of optimal and bare samples are established, and numerical calculations are executed. The photoluminescence (PL) experiment by bottom excitation demonstrates that peaks of PL spectrums of the designed and optimized samples are enhanced by 1.6 and 3.4 times, respectively, compared with the sample covered by Ag film. Compared with the naked sample, peaks of PL spectrums of bottom pumping of optimized and designed samples are enhanced by 36.3 and 17.2 times, respectively. Peaks of normalized PL spectrums by top excitation of optimized and designed samples are enhanced by 29.0 and 9.1 times, respectively. The results of numerical calculation are substantially consistent with the results of PL tests.This article is protected by copyright. All rights reserved.

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“…the number of photons emitted per tunneling electron (equation (19)). Throughout the initial phase of IET research on metal-insulator-metal (MIM) devices in the 1970s and 80s, efficiencies have remained below 10 −4 [45,46], which is not surprising considering the extremely low vacuum source efficiency, cf. Sect.…”

Section: Efficiencies On the Risementioning

confidence: 99%

Optical antennas driven by quantum tunneling: a key issues review

Parzefall

Novotny

2019

Rep. Prog. Phys.

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Analogous to radio-and microwave antennas, optical nanoantennas are devices that receive and emit radiation at optical frequencies. Until recently, the realization of electrically driven optical antennas was an outstanding challenge in nanophotonics. In this review we discuss and analyze recent reports in which quantum tunneling-specifically inelastic electron tunneling-is harnessed as a means to convert electrical energy into photons, mediated by optical antennas. To aid this analysis we introduce the fundamentals of optical antennas and inelastic electron tunneling. Our discussion is focused on recent progress in the field and on future directions and opportunities. :1910.01224v1 [cond-mat.mes-hall] CONTENTS arXiv

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Light Emission from Tunnel Junctions

Cited by 12 publications

References 26 publications

Light at the End of the Tunnel

Light at the End of the Tunnel

Tunable Emission Enhancement in Surface Plasmon‐Enhanced GaN Light‐Emitting Diode Based on the Ag–SiO₂ (Ag‐Rich) Cermet Material

Optical antennas driven by quantum tunneling: a key issues review

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Light Emission from Tunnel Junctions

Cited by 12 publications

References 26 publications

Light at the End of the Tunnel

Light at the End of the Tunnel

Tunable Emission Enhancement in Surface Plasmon‐Enhanced GaN Light‐Emitting Diode Based on the Ag–SiO2 (Ag‐Rich) Cermet Material

Optical antennas driven by quantum tunneling: a key issues review

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Tunable Emission Enhancement in Surface Plasmon‐Enhanced GaN Light‐Emitting Diode Based on the Ag–SiO₂ (Ag‐Rich) Cermet Material