2020
DOI: 10.1109/jphot.2020.3020749
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Light-Emitting Commutating Diodes for Optical Wireless Communications Within LED Drivers

Abstract: Although visible light communication (VLC) systems provide high density links for use in Internet-of-Things (IoT) devices, the design of high rate VLC transmitters that maintain luminaire efficacy is an open problem. In this article, a novel approach to the integration of VLC within light-emitting diode (LED) drivers is proposed through the replacement of freewheeling/blocking diodes with light-emitting devices termed a light-emitting commutating diodes (LECDs). In this manner, communications and illumination … Show more

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Cited by 9 publications
(5 citation statements)
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“…The study performs the simulations of three phosphor packages, consisting of in-cup phosphor, conformal phosphor, and two-layered remote phosphor. The Mie-scattering theory is applied to validate the phosphor layers' diffusing [16]- [18]. The study demonstrates that this CaO:Tb 3+ phosphor considerably promotes the illuminating beam and hue homogeneity of all three pc-WLEDs.…”
Section: Introductionmentioning
confidence: 98%
“…The study performs the simulations of three phosphor packages, consisting of in-cup phosphor, conformal phosphor, and two-layered remote phosphor. The Mie-scattering theory is applied to validate the phosphor layers' diffusing [16]- [18]. The study demonstrates that this CaO:Tb 3+ phosphor considerably promotes the illuminating beam and hue homogeneity of all three pc-WLEDs.…”
Section: Introductionmentioning
confidence: 98%
“…1,2 Various works on LEDs have been reported, such as InGaN LEDs used in an optical link, 3 parallel flip-chip AlGaN LED whose electrical and optical characteristics display strong size dependence for communication in the UV range, 4 and introduction of light-emitting commutating diodes (LECDs). 5 III-nitride materials are capable of manufacturing lasers and LEDs, 6,7 but it is still difficult to get high efficiency GaN/InGaN LED. The strong piezoelectric polarization (PZ), along the c-plane direction, induced by high lattice mismatch within GaN and InGaN layers causes the quantum-confined Stark effect (QCSE) 8 which eventually causes reduction of device's efficiency (EQE).…”
Section: Introductionmentioning
confidence: 99%
“…In the UV wavelength range, LEDs are used in a broad range of applications, such as water purification, sterilization, chemical and bio‐chemical sensing, smart sensor networks, advanced manufacturing, and many more 1,2 . Various works on LEDs have been reported, such as InGaN LEDs used in an optical link, 3 parallel flip‐chip AlGaN LED whose electrical and optical characteristics display strong size dependence for communication in the UV range, 4 and introduction of light‐emitting commutating diodes (LECDs) 5 . III‐nitride materials are capable of manufacturing lasers and LEDs, 6,7 but it is still difficult to get high efficiency GaN/InGaN LED.…”
Section: Introductionmentioning
confidence: 99%
“…is phenomenon causes the current to have a great increment in its value when the voltage has small variations [1][2][3][4][5][6][7][8][9][10][11].…”
Section: Introductionmentioning
confidence: 99%