Light-Emitting Field-Effect Transistor Based on a Tetracene Thin Film

Abstract

We report the first organic light-emitting field-effect transistor. The device structure comprises interdigitated gold source and drain electrodes on a Si/SiO(2) substrate. A polycrystalline tetracene thin film is vacuum sublimated on the substrate forming the active layer of the device. Both holes and electrons are injected from the gold contacts into this layer leading to electroluminescence from the tetracene. The output characteristics, transfer characteristics, and the optical emission properties of the device are reported. A possible mechanism for electron injection is suggested.

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

“…It should be noted that the device architecture for devices on QW1 and QW2 substrates is complex, since the devices contain more than one p-n junction. The contact geometry has some similarity with the light-emitting transistors, [38][39][40] which also include devices with layered electron and hole transporting layers with two contacts deposited on the top of the device. 40 While our devices do not have gate electrode for additional modulation of the charge injection and light emission, it has been shown that the light emission in a light emitting transistor can occur at certain drain-source bias voltages independent on the gate voltage.…”

“…40 While our devices do not have gate electrode for additional modulation of the charge injection and light emission, it has been shown that the light emission in a light emitting transistor can occur at certain drain-source bias voltages independent on the gate voltage. 38 Thus, complex device architectures can have practical relevance even though they are more complicated to understand compared to simple p-n junctions. It should also be noted that the top p-GaN layer in QW1 and QW2 devices is very thin (of the order 100-200 nm), so that at larger bias, the current spread is expected to include MQW area.…”

Direct observation of the charge carrier concentration in organic field-effect transistors by electron spin resonance

“…[1][2][3] Light-emitting properties of organic FETs have also been reported. 4,5 The studies of charge carriers in these devices are of fundamental importance in understanding the basic physical processes, such as carrier injection, accumulation, and transport, and hence, may contribute to the formulation of the design principle of highly efficient devices. However, intrinsic transport properties in the devices tend to be masked due to the molecular disorders at the device interfaces.…”

Ambipolar light-emitting organic field-effect transistor

“…Recently, a unipolar lightemitting OFET based on tetracene was reported. [12][13][14] However, in unipolar devices, light emission is restricted to a region very close to the contact that injects the charge carriers of the lower mobility. In contrast, an ambipolar lightemitting transistor would allow the electron-hole balance as well as the location of the recombination zone between source and drain electrodes to be tuned by the gate voltage, hence improving the quantum efficiency.…”