Light-Stimulated Artificial Synapse with Memory and Learning Functions by Utilizing an Aqueous Solution-Processed In₂O₃/AlLiO Thin-Film Transistor

Abstract

Light-stimulated artificial synapse shows broad application prospects in the field of neuromorphic computing. Implementation of an all-inorganic solid oxide phototransistor will be compatible with future development by providing devices with good stability and large-scale production requirements. Here, an all-inorganic lightstimulated In 2 O 3 /AlLiO thin film transistor is fabricated by a fully aqueous solution, whose threshold voltage and subthreshold swing are about 0.47 V and 0.25 V/decade, respectively. The devices can respond to optical signals and successfully simulate some important synaptic characteristics, including the transition from short-term memory to long-term memory. Under the condition of different light intensities, Pavlov's experiment is simulated to study the behavior of brain-like associative learning. In addition, this work emulates the behavior of photonic potentiation and electric depression, which can realize the erasure of optical information storage through electrical signals and maintain good erasable repeatability. More significantly, a simple fabrication of an In 2 O 3 /AlLiO all-inorganic synapse transistor can provide an effective strategy for the artificial synapses driven by optical signals.

Realization of Enhanced Long‐Term Visual Memory for Indium–Gallium–Zinc Oxide‐Based Optical Synaptic Transistor

“…[ 14–17 ] Therefore, in order to improve the visual information processing efficiency, optical synapses are also developed where it has both the synaptic functions and the photo‐sensing abilities. [ 18–33 ]…”

“…Different types of devices, such as memristors, field‐effect transistors, and phase change memories, have been studied for the application of artificial synapses. [ 16,18,19,24–41,44 ] Additionally, numerous materials including but not limited to low‐dimensional materials, perovskites, oxide semiconductors, and organic materials have been applied to artificial synapses. [ 16,18,19,24–32,41–44 ] Among these, oxide semiconductor thin‐film transistors show promising properties for optical synapses.…”

“…However, due to the lack of clear criteria between the LTM and the STM of synapses, the difference between them is difficult to discern as the difference between them is minimal due to linear increase in the current. [ 18,19,24,27–32 ]…”

“…[14][15][16][17] Therefore, in order to improve the visual information processing efficiency, optical synapses are also developed where it has both the synaptic functions and the photo-sensing abilities. [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] Different types of devices, such as memristors, field-effect transistors, and phase change memories, have been studied for the application of artificial synapses. [16,18,19,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41]44] Additionally, numerous materials including but not limited to low-dimensional materials, perovskites, oxide semiconductors, and organic materials have been applied to artificial synapses.…”

Flexible Artificial Synapses with a Biocompatible Maltose–Ascorbic Acid Electrolyte Gate for Neuromorphic Computing

“…As an important component of artificial neural systems, synaptic transistors that can simulate synaptic behavior and implement synapse calculations have gradually attracted the attention of researchers. − Electrolyte-gated synaptic transistors (EGSTs), as a form of artificial synapses, have attracted a great deal of research interest in recent years. − EGSTs have a number of advantages over transistors with a silicon oxide dielectric layer. The main motivation for using an electrolyte gate in transistors is the huge capacitance of the electrolyte, which allows transistor operation at low voltage (<2 V).…”