Photoconductivity of novel materials is the key property
of interest
for design of photodetectors, optical modulators, and switches. Despite
the photoconductivity of most novel 2d materials having been studied
both theoretically and experimentally, the same is not true for 2d
p–n junctions that are necessary blocks of most electronic
devices. Here, we study the sub-terahertz photocoductivity of gapped
bilayer graphene with electrically induced p–n junctions. We
find a strong positive contribution from junctions to resistance,
temperature resistance coefficient, and photoresistivity at cryogenic
temperatures T ∼ 20 K. The contribution to
these quantities from junctions exceeds strongly the bulk values at
uniform channel doping even at small band gaps of ∼10 meV.
We further show that positive junction photoresistance is a hallmark
of interband tunneling, and not of intraband thermionic conduction.
Our results point to the possibility of creating various interband
tunneling devices based on bilayer graphene, including steep-switching
transistors and selective sensors.