Linear Burst-Mode Receivers for DSP-Enabled Passive Optical Networks

Yin, Xin; Coudyzer, Gertjan; Ossieur, Peter; Breyne, Laurens; Lombergen, Borre Van; Bauwelinck, Johan

doi:10.1364/ofc.2021.m3g.1

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“…To allow digital equalization at the receiver and PAM-4 modulation, we previously demonstrated the linearity requirements expressed in total harmonic distortion (THD) to mitigate the power penalty in presence of limited bandwidth of optoelectronic components and chromatic dispersion [4]. As the BMTIA has been developed for this purpose, it has been designed for linearity with a target THD of < 5% (fundamental tone of 5 GHz) for bursts with an optical power up to −9 dBm (assuming 8 A/W nominal photodiode responsivity).…”

Section: Architecturementioning

confidence: 99%

“…Recently, 50G US has been consented in Amd 1 of ITU-T G.9804.3, which defines a 50G NRZ variant. To compensate for distortions due to the limited bandwidth of the opto-electronics such as the avalanche photodiode (APD), fiber chromatic dispersion and its interaction with modulator chirp [4], [5], [6], equalization will be required. This demands for a class of linear burst-mode receivers, which enables not only equalization but allows for multi-level modulation schemes such as PAM-4, increasing link capacity for all users [7], or for selected users in an opportunistically flexible PON.…”

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confidence: 99%

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100 Gbit/s PAM-4 Linear Burst-Mode Transimpedance Amplifier for Upstream Flexible Passive Optical Networks

Coudyzer

Verplaetse

Lombergen

et al. 2023

J. Lightwave Technol.

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Next-generation passive optical networks (PONs) with upstream rates of 50 Gbit/s and beyond will require a new class of burst-mode transimpedance amplifiers (BMTIAs) that are linear to enable (digital) equalization of channel impairments. Such linear BMTIAs also enable higher-order modulation formats like 4-level pulse amplitude modulation (PAM-4). In this paper, we demonstrate operation of a novel linear BMTIA integrated together with a commercial off-the-shelf 25G-class avalanche photodiode (APD), achieving 50 Gbit/s non-return-tozero (NRZ) operation with a sensitivity of -23.7 dBm optical modulation amplitude (OMA) and dynamic range exceeding 21.7 dB and 100 Gbit/s PAM-4 operation with a sensitivity of -15.8 dBm OMA and dynamic range exceeding 15.4 dB, both at a bit error ratio (BER) of 10 −2 . In addition, fast burst-mode gaincontrol and balancing circuits limit loud-soft sensitivity penalties in the case of AC-coupled circuits to less than 1.3 dB. The chip was designed in a 0.13 µm SiGe:C BiCMOS technology, has an area of 1.2×1.7 mm² and consumes between 260 mW and 310 mW. This receiver paves the way to a next-generation class of BMTIAs, supporting the ITU-T G.9804.3 Amd 1 standard.

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Section: Architecturementioning

confidence: 99%

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confidence: 99%