Linewidth effect and phase control in Ni fully silicided gates

Silicides and germanides for nano-CMOS applications

“…5 for the application to fully silicided gates (the same principle can be applied to any Ni-silicidation application) [4,5,13,[15][16][17]. In the two-step RTP process, a first RTP step (RTP1) is used to control the amount of Ni reacted.…”

(Invited) First-Principles Investigation of High-k Dielectrics for Nonvolatile Memories

“…In the REScO 3 family, the latter is balanced by the contribution of the Sc d orbitals. As a result, the REAlO 3 family sees an increase in their O 2p-RE 5d gap and a lessening in the polarization charges (Z -see equation (1) and Table I). …”

“…The core of the problem consists of physically scaling the insulating dielectric without increasing the gate leakage current. While hafnium based dielectrics, tantalate and strontium titanate have been recognized as key materials for future application in MOSFET and in DRAM (1) technological nodes, the requirements of non-volatile memory (NVM) flash based devices have not been met yet (2).…”

Thermal stability of hafnium and hafnium nitride gates on HfO2 gate dielectrics

“…The three key points for selection of gate electrode materials are work function, thermal stability, and lower resistivity. So far, many types of materials have been investigated to replace poly-silicon, such as pure metals [2][3][4][5][6], binary alloys [7][8][9][10], metal nitrides [11][12][13][14][15], metal carbides [16], and fully silicided Si (FUSI) [17][18][19][20]. Of these, the refractory transition metal nitrides are of interest owing to their good thermal stability, good oxygen diffusion barrier characteristics, and tunable work function.…”