Liquid Injection Atomic Layer Deposition of Metallic Ru Thin Films from Ru(tmhd)3 and of High-k TiO2 Thin Films from Ti(O-i-Pr)2(tmhd)2

Kim, Seong Keun; Hoffmann‐Eifert, Susanne; Waser, Rainer

doi:10.1149/1.3205063

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…In liquid-injection ALD (LIALD), the solvent used to dissolve the noble metal precursor can play a role in the reaction mechanism, as in the ALD of Ru using Ru(thd) 3 dissolved in ethylcyclohexane (ECH) and molecular oxygen. , During the noble metal precursor pulse, both Ru(thd) 3 and ECH react with the surface oxygen atoms . Because ECH oxidizes more easily, a lower concentration of Ru(thd) 3 dissolved in ECH results in a lower Ru film growth rate .…”

Section: Steady-state Reaction Mechanismsmentioning

confidence: 99%

Atomic Layer Deposition of Noble Metals and Their Oxides

2013

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Atomic layer deposition (ALD) is an attractive method to deposit thin films for advanced technological applications such as microelectronics and nanotechnology. One material group in ALD that has matured in 10 years and proven to be of wide technological importance is noble metals. In this paper, thermal ALD of noble metals and their oxides is reviewed. Noble metal films are mostly grown using O2 as the nonmetal precursor in a combustion-type chemistry. Alternatively, lower growth temperatures can be reached via noble metal oxide growth with consecutive reactions with ozone and H2. The use of true reducing chemistry (i.e., H2) is typical only for ALD of palladium at low temperatures. On the other hand, ALD of noble metal oxides has been limited with reactants such as ozone and O2 gas. In this review, reaction mechanisms in various types of processes are discussed and issues in nucleation are addressed. Deposition temperatures, film growth rates, and purities as well as evaporation temperatures used for noble metal precursors are tabulated for comparison.

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Section: Steady-state Reaction Mechanismsmentioning

confidence: 99%

Atomic Layer Deposition of Noble Metals and Their Oxides

2013

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“…Their work function is about 5 eV and may reach 6 eV depending on the surface reconstruction and/or the presence of adsorbates. , Ru is also used as a barrier and seed layer in damascene Cu plating for interconnect formation . Because of its importance in microelectronics, Ru has been subject of various investigations regarding the growth of conformal thin films by ALD ,− and the oxidation/reduction behavior of the effective work function in high-k/Ru systems. , Ru was also extensively investigated as a catalyst in many reactions, but the most interesting catalytic property of Ru resides in the strong activity of RuO 2 (110) surface in redox reactions of the Mars–van Krevelen type. , The catalytic activity of RuO 2 is probably due to its rutile crystal structure similar to that of TiO 2 , having bridged oxygen sites and coordinatively unsaturated Ru sites (1f-cus-Ru in Figure ) that are very reactive toward adsorption due to the dangling bond associated with them. Nonoxidized metallic Ru is stable in the hexagonal structure. − …”

Section: Introductionmentioning

confidence: 99%

Substrate Reactivity Effects in the Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum on Ruthenium

et al. 2011

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A detailed study of the atomic layer deposition of Al 2 O 3 on Ru film surfaces by means of in situ photoelectron spectroscopy has been carried out. We discuss how the atomic layer deposition reaction between trimethylaluminum (TMA) and H 2 O is affected by the Ru substrate. We found that RuO 2 , when present on the substrate surface, participates in the reaction with TMA and the substrate reduces to Ru. The reduction of oxygencontaining substrates to Ru is solely due to the direct reaction of the Al precursor with the substrate through adsorption on active sites. The final Al 2 O 3 /Ru structures have an interface depleted from oxygen and show different band offsets depending on the initial chemistry.

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