Liquid phase epitaxy growth and structural characterization of highly-doped Er3+:LiYF4 thin films

Basyrova, Liza; Brasse, Gurvan; Loiko, Pavel; Grygiel, C.; Solé, R.; Aguiló, Magdalena; Dı́az, Francesc; Mateos, Xavier; Benayad, Abdelmjid; Camy, Patrice

doi:10.1016/j.optmat.2022.112574

Cited by 3 publications

References 41 publications

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Er:LiYF4 planar waveguide laser at 2.8 μm

Bae,

Loiko,

Normani

et al. 2024

Applied Physics Letters

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We report on a mid-infrared erbium planar waveguide laser operating on the 4I11/2 → 4I13/2 transition. It employs a heavily doped 10.6 at. % Er3+:LiYF4 single-crystalline layer grown by liquid-phase epitaxy. The waveguide laser delivers a maximum output power of 191 mW at ∼2809 nm with a slope efficiency of 15%, a linear polarization, and a laser threshold of 134 mW. The waveguide propagation losses are 0.4 ± 0.2 dB/cm. The polarized spectroscopic properties of the Er3+:LiYF4 layers are also investigated. The stimulated-emission cross section of Er3+ ions amounts to 0.87 × 10−20 cm2 at 2809 nm for π-polarization. Er3+:LiYF4 epitaxial layers represent a promising platform for integrated low-loss mid-infrared light sources.

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Er:LiYF4 planar waveguide laser at 2.8 μm

Bae,

Loiko,

Normani

et al. 2024

Applied Physics Letters

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Planar Er:LiYF4 Waveguide Laser at 2.8 μm

Bae,

Loiko,

Brasse

et al. 2024

High-Brightness Sources and Light-Driven Interactions Congress

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Liquid phase epitaxy growth and visible emission of Tb³⁺,Gd³⁺:LiYF₄ layers

Baillard¹,

Brasse²,

Loiko³

et al. 2023

Opt. Mater. Express

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Single-crystalline layers of 12 at.% Tb3+, 5 at.% Gd3+:LiYF4 were grown by the liquid phase epitaxy method on (001) oriented bulk undoped LiYF4 substrates using LiF as a solvent. The growth temperature was 737–740 °C, the growth duration was 15 - 25 min, and the layer thickness was 40–90 µm. The structural, morphological, vibronic and spectroscopic properties of the layers were studied. Tb3+ ions were uniformly distributed in the layers with no diffusion into the substrate. Polarized Raman spectroscopy confirmed the orientation of the layers (growth along the [001] direction). Under excitation in the blue, the layers exhibited intense green emission. For the 5D4 → 7F5 Tb3+ transition, the peak stimulated-emission cross-section is 1.28 × 10−21 cm2 at 542.0 nm for π-polarization. The luminescence lifetime of the 5D4 Tb3+ state is 5.05 ms at room temperature. The crystal-field splitting of Tb3+ multiplets was determined at low temperature. The developed epitaxies are promising for green and yellow waveguide lasers.

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Liquid phase epitaxy growth and structural characterization of highly-doped Er3+:LiYF4 thin films

Cited by 3 publications

References 41 publications

Er:LiYF4 planar waveguide laser at 2.8 μm

Er:LiYF4 planar waveguide laser at 2.8 μm

Planar Er:LiYF4 Waveguide Laser at 2.8 μm

Liquid phase epitaxy growth and visible emission of Tb³⁺,Gd³⁺:LiYF₄ layers

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Liquid phase epitaxy growth and structural characterization of highly-doped Er3+:LiYF4 thin films

Cited by 3 publications

References 41 publications

Er:LiYF4 planar waveguide laser at 2.8 μm

Er:LiYF4 planar waveguide laser at 2.8 μm

Planar Er:LiYF4 Waveguide Laser at 2.8 μm

Liquid phase epitaxy growth and visible emission of Tb3+,Gd3+:LiYF4 layers

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Liquid phase epitaxy growth and visible emission of Tb³⁺,Gd³⁺:LiYF₄ layers