Lithium titanate synaptic device imitating lithium-ion battery structure

Abstract

With the growing prevalence of neuromorphic computing algorithms, there is a growing need for electronic synaptic devices. In this study, using Li4+x Ti5O12 (LTO) as the resistive switching layer, C as the lithium ions storage layer, and Li1+x Al x Ti2−x (PO4)3 (LATP) as ions transmission layer, a synaptic device is designed with the structure of Pt/C/LATP/LTO/PtSi to imitate the lithium-ion battery. Variation of the thickness of the LATP layer in the LTO device is explored to show the impact on the device’s synaptic performance. With a LATP thickness of 100 nm, the LTO synaptic device exhibits a high potentiation/depression cyclic stability of over 50 cycles, improved potentiation/depression linearity and smoothness. The synaptic potentiation/depression is ascribed to migration of lithium ions from the LTO layer. A conductance relaxation characteristic of the device is explained by battery self-discharge phenomenon. The battery effect in the LTO device also led to generation of electromotive force. The study of battery-imitating LTO synaptic device offers new perspectives on the connection between battery and analog synaptic device.