2009
DOI: 10.1149/1.3207714
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Local Area Deposition of SiOC Films by using a Very-high-frequency Atmospheric Pressure Microplasma Jet from Tetraethoxysilane

Abstract: SiOC films were fabricated using an atmospheric-pressure microplasma jet (AP-MPJ) from a tetraethoxysilane (TEOS) and argon mixture. The film morphology and fine structure of product depend on the plasma parameter, which changed from the particle to the uniform film state with a parabolic-or a dome-shaped profile. The correlation between the deposition profile and the fine structure of product is discussed.

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Cited by 2 publications
(3 citation statements)
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“…In comparison, Si ultrathin films immersed in different dielectric matrices (SiO x , SiN x , and SiC) and their oxide forms (SRO silicon‐rich oxide, SRSO silicon‐rich silicon oxide, SiO x N y , SiO x C y ) have proven to be the best options to obtain Si‐based compound nanomaterials by depositing nonstoichiometric films. [ 36–44 ] It is well known that embedding NPs and QDs in these matrices could substantially change the structure's optical and electrical properties. [ 45 ]…”
Section: Embedding Qds and Nps In Thin‐film Matrices And Their Relati...mentioning
confidence: 99%
See 1 more Smart Citation
“…In comparison, Si ultrathin films immersed in different dielectric matrices (SiO x , SiN x , and SiC) and their oxide forms (SRO silicon‐rich oxide, SRSO silicon‐rich silicon oxide, SiO x N y , SiO x C y ) have proven to be the best options to obtain Si‐based compound nanomaterials by depositing nonstoichiometric films. [ 36–44 ] It is well known that embedding NPs and QDs in these matrices could substantially change the structure's optical and electrical properties. [ 45 ]…”
Section: Embedding Qds and Nps In Thin‐film Matrices And Their Relati...mentioning
confidence: 99%
“…In comparison, Si ultrathin films immersed in different dielectric matrices (SiO x , SiN x , and SiC) and their oxide forms (SRO silicon-rich oxide, SRSO silicon-rich silicon oxide, SiO x N y , SiO x C y ) have proven to be the best options to obtain Si-based compound nanomaterials by depositing nonstoichiometric films. [36][37][38][39][40][41][42][43][44] It is well known that embedding NPs and QDs in these matrices could substantially change the structure's optical and electrical properties. [45] Regarding the characteristic features of each dielectric matrix and their applications, previous eports describe the increase in the refractive index (RI) by increasing the Si amount in these Si-rich dielectric matrices.…”
Section: Embedding Qds and Nps In Thin-film Matrices And Their Relati...mentioning
confidence: 99%
“…SiOC films are also fabricated using an atmospheric-pressure microplasma jet from a tetraethoxysilane and argon mixture. The morphology and the fine structure of the coating depend on plasma parameters, which change from particles to a uniform film state with a parabolic- or a dome-shaped profile [62]. Two distinct deposition profiles are observed, i.e.…”
Section: Coating Formation Processesmentioning
confidence: 99%