J. Phys. Soc. Jpn.
 2015
DOI: 10.7566/jpsj.84.044711
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Local Valence Electronic States and Valence-Band Maximum of Ultrathin Silicon Nitride Films on Si(111) Studied by Auger Photoelectron Coincidence Spectroscopy: Thickness and Interface Structure Dependence

Takuhiro Kakiuchi
1
,
Masashi Tahara
2
,
Kenji Mase
3
et al.
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