Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Abstract

Se-doped CdO thin films were prepared on p-Si substrates via spin coating. Morphological, structural and absorption measurements of CdO:Se film was performed. Then, a CdS:Se/p-Si heterojunction was produced by coating CdO:Se film on a p-Si substrate using spin coating method. From the I-V measurements, it has been seen that the device has a very good rectification feature in the dark, at room temperature. In order to investigate the performance of the device under light, a detailed analysis was performed by performing I-V measurements under UV light (365 and 395 nm, 10 mW/cm2) and different intensities of visible light (between 10-125 mW/cm2) as well as ambient light. It was observed that the CdO:Se/p-Si heterojunction performed well under both illumination conditions. The maximum responsivity and specific detectivity values ​​were obtained as 0.72 and 4.47 A/W and 3.31×109 and 2.05×1010 Jones for visible and UV regions, respectively. It was also seen that the device exhibited very high performance and stability even after 160 days.

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p–n Junction Photodiode with a Fast Responsive and High Rectification Ratio

“…Table and Table S1 show the recent performance data of solution-processed UV photodetectors based on p–n junctions and various photodetectors, comparing them with the PTAA/ZnO PD. Our device showcases exceptional characteristics, including high detectivity, rapid response time, and a superior rectification ratio compared to other UV photodetectors. − Moreover, the unencapsulated devices, stored at a relative humidity of approximately 45%, underwent periodic I – V curve measurements. After 60 days, Figure S12 shows no significant change observed in the electrical characteristics of the measured device.…”