Low cross-talk 2 × 2 silicon electro-optic switch matrix with a double-gate configuration

Xing, Jiejiang; Li, Zhiyong; Yu, Yude; Yu, Jinzhong

doi:10.1364/ol.38.004774

Cited by 36 publications

(14 citation statements)

References 14 publications

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“…It should be mentioned that the waveguide loss increases during EO tuning, and hence it is difficult to reduce the crosstalk of MZI switch elements to below À20 dB. In order to address this issue, more complicated switch units can be employed, for example, using double-gate 2 Â 2 switch element made of 4 MZIs [26]. In this way, the crosstalk can be reduced to below À30 dB and the performance of our 4 Â 4 switch can thus be further improved.…”

Section: Resultsmentioning

confidence: 99%

Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers

Zhou

et al. 2015

IEEE Photonics J.

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We report a broadband 4 Â 4 nonblocking optical switch with Mach-Zehnder interferometers (MZIs) as switch elements on a silicon platform. Silicon resistive heaters are used for phase error correction of MZI arms with total thermooptic power consumption of 33.7 mW. Fast switching is enabled by p-i-n diodes, with average electrooptic tuning power of 14.3 mW for the 24 essential switching states as required for nonblocking routing. The average on-chip insertion loss is 5.8-7.7 dB and crosstalk better than À12 dB at wavelength of 1550 nm. Optical transmission experiments using a highthroughput 50 Gb/s quadrature phase-shift keying (QPSK) optical signal reveal that no significant deterioration is observed on constellation diagrams.

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Section: Resultsmentioning

confidence: 99%

Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers

Zhou

et al. 2015

IEEE Photonics J.

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“…A disadvantage of directional couplers is that they have a narrow optical bandwidth. One can use other types of couplers such as 2 × 2 multimode interferomer (MMI) to broaden the optical bandwidth [8]. However, while 3-dB MMIs are robust and wavelength insensitive, they have intrinsic excess loss [17].…”

Section: A Model and Definitionsmentioning

confidence: 99%

Design and Fabrication of Low-Insertion-Loss and Low-Crosstalk Broadband $2\times 2$ Mach–Zehnder Silicon Photonic Switches

Dupuis

Lee

Rylyakov

et al. 2015

J. Lightwave Technol.

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We present the design, fabrication, and measurement results of low-insertion-loss and low-crosstalk broadband 2 × 2 Mach-Zehnder switches for nanosecond-scale optical data routing applications. We propose a simulation framework to calculate the spectral characteristics of switches and use it to design two switches: one based on directional couplers, the other using two-section directional couplers for broader bandwidth. We show that driving the switch in a push-pull manner enables to reduce insertion loss and optical crosstalk at the expense of the optical bandwidth. We achieve a good correlation between simulations and devices fabricated in IBM's 90-nm photonics-enabled CMOS process. We demonstrate a push-pull drive switch with insertion loss of ∼1 dB and an optical crosstalk smaller than −23 dB over a 45-nm optical bandwidth in the O-band. We further achieve a transition time of ∼4 ns with an average phase shifter consumption of 1 mW and a heater efficiency of ∼25 mW/π. Index Terms-Optical switches, photonic integrated circuits. 0733-8724

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“…Although it is faster and more power efficient than the TO effect, the accompanied free carrier absorption, however, inevitably brings about additional loss. As a result, the crosstalk due to unbalanced interference of MZI will increase [7]- [9]. Hence, we used the TO effect to design our device.…”

Section: Device Structure and Fabricationmentioning

confidence: 99%

4 × 4 Nonblocking Silicon Thermo-Optic Switches Based on Multimode Interferometers

Zhou

et al. 2015

J. Lightwave Technol.

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We experimentally demonstrate a silicon 4 × 4 nonblocking thermo-optic (TO) switch using a generalized MachZehnder interferometer constructed on multimode interferometers. All the 24 switching states for nonblocking switching are characterized. The device fabricated using CMOS technologies has a footprint of 2.8 × 0.65 mm 2 . The measured average on-chip insertion loss is 9 ± 2 dB and the crosstalk for all switching states is better than -12 dB. The average TO switching power consumption is 109 mW. The switching functionality is verified by transmission of a 40-Gb/s quadrature phase-shift keying optical signal.

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Low cross-talk 2 × 2 silicon electro-optic switch matrix with a double-gate configuration

Cited by 36 publications

References 14 publications

Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers

Broadband 4 $\times$ 4 Nonblocking Silicon Electrooptic Switches Based on Mach–Zehnder Interferometers

Design and Fabrication of Low-Insertion-Loss and Low-Crosstalk Broadband $2\times 2$ Mach–Zehnder Silicon Photonic Switches

4 × 4 Nonblocking Silicon Thermo-Optic Switches Based on Multimode Interferometers

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