Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

Abstract

We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 × 50 μm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of −3 V, which corresponds to a dark current density of 0.13 mA/cm2. This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of −5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.

Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate

“…An ultra-low dark current of 5.3×10 -12 A is obtained under the bias voltage of -1 V at 300K, which corresponds to a dark current density of 3.5×10 -7 A/cm 2 . It is noted that this dark current density is more than 200 times lower than the previous result on GaAs-on-V-grooved-Si template 15 and 40 times lower than the result on GaP/Si substrate 17 . The dark current increases to 1.7×10 -10 A as the temperature rises to 345 K (corresponding to a dark current density of 1.1×10 -5 A/cm 2 ).…”

0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

“…In this study, we demonstrate InGaAs/GaAs MQW NRWPDs with a dark current of ~0.3 pA at -1 V bias voltage at 1020 nm wavelength. This is almost 2 orders of magnitude lower than previously reported [6] , and to the best of our knowledge the lowest dark current ever reported for a monolithic III-V on Si photodetector [7][8][9] . They exhibit internal responsivities (internal quantum efficiency) of 0.65 A/W (79%) at -1 V bias voltage at 1020 nm wavelength.…”

“…2). Considering the 440 nm width (measured on TEM images) and 500 μm length of the NRs, this corresponds to a 1.36x10 -7 A/cm 2 equivalent dark current density at -1 V, which is lower than the lowest reported dark currents of III-V PDs grown on Si [6][7][8][9] , and 5-order lower than typical Ge-on-Si PDs [1] . It is important to note that the devices reported here have higher bandgap in this comparison.…”

Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si

“…In this work, we use an alternative approach through direct epitaxy for better economy of scale, better integration with QD lasers, and demonstrate the first InAs QD APDs monolithically grown on (001) Si with a low dark current of 0.1 nA in a 3 × 50 μm 2 device biased at -5V. The corresponding dark current density is as low as 6.7×10 -5 A/cm 2 , which is among the best reported values for any III-V PDs grown on a Si substrate at the same reverse bias [14][15][16][17] . In addition, the PDs achieve a decent responsivity of 0.234 A/W at 1310 at unit gain, limited by coupling into the photodetector waveguide.…”