2011 International Reliability Physics Symposium 2011
DOI: 10.1109/irps.2011.5784462
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Low-energy UV effects on Organic Thin-Film-Transistors

Abstract: We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420nm.

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Cited by 7 publications
(12 citation statements)
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“…It is well known that either light or bias induce charge trapping [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41], and this is confirmed by the experimental results plotted on Fig. 5.…”
Section: Discussionsupporting
confidence: 61%
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“…It is well known that either light or bias induce charge trapping [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41], and this is confirmed by the experimental results plotted on Fig. 5.…”
Section: Discussionsupporting
confidence: 61%
“…Very small variations occur on the reference device. Any changes arise from the intrinsic aging, due to air and moisture exposure, and from the effects of measurements on the characteristic themselves, as we discussed in [39,40]. When bias is applied (Fig.…”
Section: Resultsmentioning
confidence: 99%
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