Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions

Paget, D.; Lampel, G.; Sapoval, B.; Safarov, V. I.

doi:10.1103/physrevb.15.5780

Cited by 492 publications

(577 citation statements)

References 23 publications

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“…We introduce the total magnetic field as B ជ ϭB ជ ext ϩB ជ N , where B ជ ext is the external magnetic field and B ជ N is the effective field ͑for spin motion only͒ produced by the polarized nuclear spins via the hyperfine interaction. The high level of nuclear spin polarization in GaAs, closed to the maximum of 5.3 T, 15 has been achieved experimentally. 16,17 It is anticipated that the effect of the nuclear spin polarization on the conductance is similar to the effect of in-plane magnetic field.…”

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confidence: 95%

Effect of spin-orbit interaction and in-plane magnetic field on the conductance of a quasi-one-dimensional system

2004

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We study the effect of spin-orbit interaction and in-plane effective magnetic field on the conductance of a quasi-one-dimensional ballistic electron system. The effective magnetic field includes the externally applied field, as well as the field due to polarized nuclear spins. The interplay of the spin-orbit interaction with effective magnetic field significantly modifies the band structure, producing additional sub-band extrema and energy gaps, introducing the dependence of the sub-band energies on the field direction. We generalize the Landauer formula at finite temperatures to incorporate these special features of the dispersion relation. The obtained formula describes the conductance of a ballistic conductor with an arbitrary dispersion relation.Recently, there have been numerous studies, both theoretical and experimental, of the properties of quasi-one-dimensional systems [1][2][3][4][5][6][7][8]. The motivation behind this interest has been the observation of conductance quantization. Most quasi-one-dimensional systems, or Quantum Wires (QW), are created by a split gate technique in a two-dimensional electron gas (2DEG) [6,7]. When a negative potential is applied to the gates, the electrons are depleted underneath. Thus, a one-dimensional channel or constriction is created between two reservoirs, in this case the 2DEG. For ballistic transport to occur [1], this constriction should be less than the electron mean free path, and have a width of the order of de Broglie wavelength [6][7][8]. When these conditions are satisfied, the electrons will move ballistically in the lateral direction and are confined transversely. The transverse confinement creates a discrete set of modes in the channel.The explanation for conductance quantization is found by using a non-interacting electron model.With a small bias applied across the channel, the electrons move from one reservoir to the other. Due to the transverse confinement in channel, the electrons are distributed, according to the Fermi-Dirac distribution, among various sub-bands in the channel. The calculation of the conductance has been summarized in the Landauer-Büttiker formalism [6][7][8]. Each one of the sub-bands contributes to the conductance.

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Effect of spin-orbit interaction and in-plane magnetic field on the conductance of a quasi-one-dimensional system

2004

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“…3a,b show interleaved measurements of the position of the S-T + transition 17 and the oscillatory S-T 0 mixing as a function of t pump using the T + -pumping cycle. A shift of the S-T + transition to more negative ε corresponds to the build-up of an average field B z nuc oriented opposite to the external magnetic field, consistent with spin flips from down to up in the nuclear system 19 . Fig.…”

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Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization

et al. 2009

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“…This low-field feature is reminiscent of similar obser-vations in optical [12] and transport [13] measurements of spin-polarized electron precession in GaAs. In that case, the phenomena was attributed to a non-linear dynamic feedback between electron spin and nuclear spin via Overhauser and Knight fields.…”

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confidence: 79%

Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon

Lü

Appelbaum

2011

Phys. Rev. Lett.

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Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (≈50ps) due to purely conduction-band transport from injector to detector and (ii) long timescales (≈1ns) originating from delays associated with capture/re-emission in shallow impurity traps. The origin of this phenomenon, examined via temperature, voltage, and electron density dependence measurements, is established by means of comparison to a numerical model and is shown to reveal the participation of metastable excited states in the phosphorus impurity spectrum. This work therefore demonstrates the potential to make the study of macroscopic spin transport relevant to the quantum regime of individual spin interactions with impurities as envisioned for quantum information applications.

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Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions

Cited by 492 publications

References 23 publications

Effect of spin-orbit interaction and in-plane magnetic field on the conductance of a quasi-one-dimensional system

Effect of spin-orbit interaction and in-plane magnetic field on the conductance of a quasi-one-dimensional system

Universal quantum control of two-electron spin quantum bits using dynamic nuclear polarization

Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon

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