Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide

Bulancea-Lindvall, Oscar; Eiles, Matthew T.; Són, Nguyên Tiên; Abrikosov, Igor A.; Ivády, Viktor

doi:10.1103/physrevapplied.19.034006

Cited by 3 publications

(1 citation statement)

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“…In section 5, we will discuss the application of SiC colour centres in magnetic field sensing [13,23,[25][26][27][28][29][30][31][32][33][34][35][36][37], temperature sensing [18,26,[38][39][40], electric field sensing [41][42][43][44].…”

Section: Introductionmentioning

confidence: 99%

Quantum systems in silicon carbide for sensing applications

Castelletto,

Lew,

Lin

et al. 2023

Rep. Prog. Phys.

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This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.

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Section: Introductionmentioning

confidence: 99%

Quantum systems in silicon carbide for sensing applications

Castelletto,

Lew,

Lin

et al. 2023

Rep. Prog. Phys.

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First-principles computational methods for quantum defects in two-dimensional materials: A perspective

Seo,

Ivády,

Ping

2024

Applied Physics Letters

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Quantum defects are atomic defects in materials that provide resources to construct quantum information devices such as single-photon emitters and spin qubits. Recently, two-dimensional (2D) materials gained prominence as a host of quantum defects with many attractive features derived from their atomically thin and layered material formfactor. In this Perspective, we discuss first-principles computational methods and challenges to predict the spin and electronic properties of quantum defects in 2D materials. We focus on the open quantum system nature of the defects and their interaction with external parameters such as electric field, magnetic field, and lattice strain. We also discuss how such prediction and understanding can be used to guide experimental studies, ranging from defect identification to tuning of their spin and optical properties. This Perspective provides significant insights into the interplay between the defect, the host material, and the environment, which will be essential in the pursuit of ideal two-dimensional quantum defect platforms.

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