Low-frequency current noise with a 1/&lt;i&gt;f&lt;/i&gt; spectrum in solids

Kogan, Sh. M.

doi:10.3367/ufnr.0145.198502d.0285

Cited by 101 publications

(9 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In addition, Eq. (10) is used to estimate from noise measurements performed at room temperature before and after irradiation, and adjusted to cover the same portion of the Si band gap spanned by the DTBT method via [102]: (17) Estimates of (noise) at SiO for the devices of In the MOS noise literature, authors often attribute the observed noise to interface traps (e.g., [4], [65], [75]), instead of oxide or border traps, which is usually the result of obsolete and/or imprecise nomenclature [5], [7], [144]. However, there are some cases in which interface traps truly do appear to affect the observed low-frequency noise of transistors.…”

Section: Oxide Interface and Border Trapsmentioning

confidence: 99%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

163

View full text Add to dashboard Cite

This paper reviews and compares predictions of the Dutta-Horn model of low-frequency excess ( ) noise with experimental results for thin metal films, MOS transistors, and GaN/AlGaN high-electron mobility transistors (HEMTs). For metal films, mobility fluctuations associated with carrier-defect scattering lead to noise. In contrast, for most semiconductor devices, the noise usually results from fluctuations in the number of carriers due to charge exchange between the channel and defects, usually at or near a critical semiconductor/insulator interface. The Dutta-Horn model describes the noise with high precision in most cases. Insight into the physical mechanisms that lead to noise in microelectronic materials and devices has been obtained via total-ionizing-dose irradiation and/or thermal an- nealing, as illustrated with several examples. With the assistance of the Dutta-Horn model, measurements of the noise magnitude and temperature and/or voltage dependence of the noise enable estimates of the energy distributions of defects that lead to noise. The microstructure of several defects and/or impurities that cause noise in MOS devices (primarily O vacancies) and GaN/AlGaN HEMTs (e.g., hydrogenated impurity centers, N vacancies, and/or Fe centers) have been identified via experiments and density functional theory calculations.Index Terms-Border traps, gallium nitride, HEMTs, interface traps, low-frequency noise, MOS devices, noise, oxide traps, radiation response, silicon carbide. 0018-9499

show abstract

Section: Oxide Interface and Border Trapsmentioning

confidence: 99%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

163

View full text Add to dashboard Cite

show abstract

“…This theory, classically, has two conserved currents, the vector currentΨγ µ Ψ and the axial one,Ψγ µ γ 5 Ψ. (There are two other conserved currents [32], but this is another story.) The vector current is useless from the point of view of the 't Hooft matching [31] and we will forget about it, focusing on the axial U(1) symmetry associated with the axial current.…”

Section: Comment On Discrete Anomaly Matchingmentioning

confidence: 99%

More on supersymmetric domain walls,Ncounting, and glued potentials

1998

View full text Add to dashboard Cite

Various features of domain walls in supersymmetric gluodynamics are discussed. We give a simple fieldtheoretic interpretation of the phenomenon of strings ending on the walls recently conjectured by Witten. An explanation of this phenomenon in the framework of gauge field theory is outlined. The phenomenon is argued to be particularly natural in supersymmetric theories which support degenerate vacuum states with distinct physical properties. The issue of the existence ͑or nonexistence͒ of the BPS saturated walls in the theories with glued ͑super͒potentials is addressed. The amended Veneziano-Yankielowicz effective Lagrangian belongs to this class. The physical origin of the cusp structure of the effective Lagrangian is revealed, and the limitation it imposes on the calculability of the wall tension is explained. Related problems are considered. In particular, it is shown that the so-called discrete anomaly matching, when properly implemented, does not rule out the chirally symmetric phase of supersymmetric gluodynamics, contrary to recent claims.

show abstract

“…In many experimental studies devoted to 1/f fluctuations, a Gaussian pattern of the oscillation amplitude distribution functions is observed; this pattern is retained during scaling [8][9][10]. A phenomenological theory of 1/f fluctuations was suggested in [1]; according to this theory, flicker noise arises as a result of simultaneous occurrence and interaction of different phase transitions.…”

Section: Introductionmentioning

confidence: 99%

“…In spite of numerous studied devoted to 1/f spectra, the question of the existence of a single source of 1/f spectrum and of a possible mechanism of generation of scale-invariant fluctuations is still under discussion [7][8][9]. In many experimental studies devoted to 1/f fluctuations, a Gaussian pattern of the oscillation amplitude distribution functions is observed; this pattern is retained during scaling [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Fluctuations with 1/f Spectrum under Conditions of Acoustic Cavitation of Water

et al. 2005

View full text Add to dashboard Cite

The results are given of an experimental investigation of fluctuations under conditions of cavitation of water in an ultrasonic field. The laser photometry and resistive methods are employed. The fluctuations of the intensity of transmitted laser radiation and the fluctuations of electrical conductivity during the passage of electric current through a weak aqueous electrolyte under conditions of ultrasonic cavitation are measured in the experiments. A mode is found which is characterized by the 1/f-behavior of power spectra and by the bimodal function of local distribution of fluctuation amplitudes. The distribution function under conditions of scale roughening of realizations is investigated. It is found that an increase in the region being probed leads to scale-invariant Gaussian distributions; this agrees with the theoretical concepts of the generation of 1/f fluctuations in the case of nonequilibrium phase transitions.

show abstract

Low-frequency current noise with a 1/<i>f</i> spectrum in solids

Cited by 101 publications

References 6 publications

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

More on supersymmetric domain walls,Ncounting, and glued potentials

Fluctuations with 1/f Spectrum under Conditions of Acoustic Cavitation of Water

Contact Info

Product

Resources

About