2015
DOI: 10.1021/acs.nanolett.5b01117
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Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus

Abstract: As a new two-dimensional layered material, black phosphorus (BP) is a promising material for nanoelectronics and nano-optoelectronics. We use Raman spectroscopy and first-principles theory to report our findings related to low-frequency (LF) interlayer breathing modes (<100 cm -1 ) in few-layer BP for the first time. The breathing modes are assigned to Ag symmetry by the laser polarization dependence study and group theory analysis. Compared to the high-frequency (HF) Raman modes, the LF breathing modes are mu… Show more

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Cited by 186 publications
(300 citation statements)
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“…Further, unlike ref. 12, our BP flakes are encapsulated by both AlOx and NbV, making ambient oxidation [7] or photodegradation [27] less significant, giving us an intrinsic measurement of BP's anisotropic thermal conductivities.We briefly note our thermal conductivity results for ambient oxidized BP samples.One BP sample (h > 600 nm thick) was coated with NbV three months after AlOx encapsulation and measured two weeks after NbV deposition. This sample exhibits much we observe BP degradation from under both the NbV and AlOx encapsulants ( Figure S5).…”
mentioning
confidence: 99%
“…Further, unlike ref. 12, our BP flakes are encapsulated by both AlOx and NbV, making ambient oxidation [7] or photodegradation [27] less significant, giving us an intrinsic measurement of BP's anisotropic thermal conductivities.We briefly note our thermal conductivity results for ambient oxidized BP samples.One BP sample (h > 600 nm thick) was coated with NbV three months after AlOx encapsulation and measured two weeks after NbV deposition. This sample exhibits much we observe BP degradation from under both the NbV and AlOx encapsulants ( Figure S5).…”
mentioning
confidence: 99%
“…31,32 Because the accumulated intensity of a Raman mode is determined by the Raman cross-section, which is proportional to | × × | 2 , the intensities are related to the Raman tensor R and the scattering geometry in polarization configuration e. 34,35 According to Eq. (S1), the Raman tensor parameter c is larger than the parameter a under 532 nm laser excitation, consistent with the recently obtained theoretical result.…”
mentioning
confidence: 99%
“…6,[14][15][16][17][18][19] The accidental degeneracy discussed above has not been reported in these previous DFT calculations. It is also worth mentioning that LDA usually overbinds the atomic structure yielding smaller bond lengths and lattice constants than experiment.…”
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confidence: 76%
“…However, it is quite uncommon that for BP, even LDA significantly underestimates the Raman frequency of the A g 2 mode. 6,15,16,18 As will be discussed below, the commonly used Perdew-Burke-Ernzerhof (PBE) functional also underestimates the frequency of the A g 2 mode, even including the dispersion force correction.…”
mentioning
confidence: 99%