Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage

Mafinejad, Yasser; Kouzani, Abbas Z.; Mafinezhad, Khalil; Hosseinnezhad, Reza

doi:10.1007/s00170-017-0558-9

Cited by 34 publications

(3 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fixed-fixed beam capacitive shunt switch is the most common of all the RF MEMS switch types. The most often used transmission lines for RF MEMS devices are micro strip and coplanar waveguide (CPW) [16] [17]. Micro strip lines, on the other hand, do not have the potential to integrate a lumped component in both series and shunt topologies, but CPW transmission lines can estimates more accurately [18] [19].…”

Section: Literature Surveymentioning

confidence: 99%

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

Gandhi¹,

Govardhani²,

Narayana³

2022

IJIE

View full text Add to dashboard Cite

The artificial intelligence-based MEMS switch designs have been led technology in present micro-electronic applications. The 4G and 5G communication hardware networks have working been through RF-MEMS switches. The earlier MEMS deigns are outdated in terms of functionality and compatibility, so that a realistic RF-MEMS based advanced configurations are compulsory for future electronic applications. In this research work 2 different shunt-capacitive type configurations have been implemented and those are verified on COMSOL Multi-physics toolbox as well as functionality been verified on HFSS software tool. The electromechanical properties of proposed shunt type RF-MEMS switch attained more perfection in functionality compared to past configurations. The implemented switching model has uniform meandering and derives pull-in-voltage of 18.5v along with 1.2xs switching time. The 2nd type shunt RF-MEMS model has been generated pull-in-voltage of 25.5v and isolation loss of 37.20. The performance metrics like Length 25.34 μm, Width 28.92 μm and Thickness 34.42 μm had been improved compared to previous models. The deigned shunt-capacitive type RF-MEMS models are most prominent in operation and offering advanced microelectronics applications.

show abstract

Section: Literature Surveymentioning

confidence: 99%

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

Gandhi¹,

Govardhani²,

Narayana³

2022

IJIE

View full text Add to dashboard Cite

show abstract

“…e electrostatic switch needs to determine the pull-in voltage to prevent excessive voltage from causing adhesion failure of the structure [19].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Characteristics of Microring Driven by the Symmetrically Distributed Electrostatic Force

et al. 2021

View full text Add to dashboard Cite

This paper aims at investigating the dynamic characteristics of a microring driven by dual arch electrodes because they are basic elements of microelectrostatic motors. The dual arch electrodes surround the periphery of the microring and are arranged symmetrically to the center of the ring. The electrodes are fixed while the microring is flexible. The electrostatic force will deform the microring, while the deflection of the microring changes the gap between the microring and the electrodes, thereby changing the electrostatic force. Therefore, this is an electromechanical coupling effect. The nonlinear partial-differential equation that governs the motion of the microring is derived based on thin shell theory. Then, based on the assumption of small deflection, the nonlinear governing equation is linearized by truncating the higher-order terms of the Taylor series expansion of the nonlinear electrostatic force. After that, the linearized governing equation is discretized into a set of ordinary differential equations using Galerkin method in which the mode shape functions of the ring are adopted. The influences of the structural damping of the microring and the span of the arch electrodes on the forced response and dynamical stabilities of the microring are investigated. The results show that the damping ratio has a great influence on the system instability during high-frequency excitation. The unstable region of the system can increase with the increase of the electrode span; the response amplitude can also be increased within a certain range.

show abstract

“…These devices are the integration of several micro-components on a single chip to form a microsystem that can sense and control an environment. In the last decade, devices such as switches, voltage-driven capacitors, inductors, acoustic and mechanical resonators, all employing MEMS technology, have experienced tremendous growth, particularly in radio frequency (RF) applications [4][5][6][7]. Among these devices, RF MEMS switches are one of the most fundamental and important MEMS devices in the microwave range.…”

mentioning

confidence: 99%

Electromechanical modelling and stress analysis of RF MEMS capacitive shunt switch

et al. 2022

View full text Add to dashboard Cite

This paper presents the simulation and theoretically calculation results of a shunt switch with Electro-mechanical modelling and stress gradient characteristics. The analysis is done with three membrane structures such as plane beam, incorporated with and without perforations, and non-uniform meander type beam, these are simulated in the COMSOL Multiphysics tool. The various Modal analyses are carried out for different values of residual stress gradients such as different structures, materials, and beam thickness. These analyzes are described by the fact that higher stress gradient values are undesirable for switching. By analysing all the results we have observed that the stress analysis for a shows that non-uniform meandered switch experiences maximum stress of 35.6 MPa, and center deflection of 0.06 MPa/μm, the deformations of the beam which is the least among the considered switches.

show abstract

Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage

Cited by 34 publications

References 22 publications

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

An Advanced Real Time Lead RF-MEMS Based Switch Design for AI Applications

Dynamic Characteristics of Microring Driven by the Symmetrically Distributed Electrostatic Force

Electromechanical modelling and stress analysis of RF MEMS capacitive shunt switch

Contact Info

Product

Resources

About