Low noise JFETs for room temperature x-ray detectors

Temperature characterization of deep and shallow defect centers of low noise silicon JFETs

“…Reducing the temperature reveals their presence. We have selected a very low noise Si JFET process especially designed for low temperature operation [49]. We scanned the temperature in two ranges: from 80 K to about 150 K and from 80 K down to 14 K. In this section, we will shown the results for the first situation.…”