Low operation voltage macromolecular composite memory assisted by graphene nanoflakes

Abstract

The trend towards simple and low-cost processing is one of the most important for macromolecular memory development. Here, bistable memory devices using a solution-processable active material, a mixture of graphene nanoflakes (GNFs) and insulating poly(vinyl alcohol) (PVA), are investigated, which serve as the first example for the direct integration of as-prepared nanoscale graphene into macromolecular memory devices through a one-step low-temperature processing method. Bistable electrical switching behavior and nonvolatile rewritable memory effects are realized by using an indium-tin-oxide/GNF-PVA/silver (ITO/GNF-PVA/Ag) sandwich structure. The resulting device exhibits low operation voltages of +1.4 V (turn-on) and À1.3 V (turn-off), which is promising for memory cells with low power consumptions. The programmable ON-and OFF-states possess a retention time of over 10 4 s and endure up to 10 7 read pulses. The carrier transport in the OFF-and ON-states follows the typical trap-limited space charge limited current and Ohmic laws, respectively. The asymmetric electrical switch behavior is therefore attributed to conducting filaments formed in the PVA layer assisted by the charged GNFs that induce the transition of the conductivity. Our study provides a potential approach for integrating as-prepared graphene into macromolecular memory devices with excellent performances through a simple solution-process.

Growth of gold nanoparticles using aluminum template via low-temperature hydrothermal method for memory applications

“…8) SCLC. The transport mechanism was in agreement with that reported by Ooi et al and Lai et al [34,35].…”

Controllable reinforcement of stiffness and toughness of polypropylene via thermally induced self‐assembly of β‐nucleating agent

“…[21][22][23] It was also reported that the self-assembled structure as a template could direct the following lateral growth of the chain-folded lamella into different morphologies. [24][25][26][27] For instance, Varga prepared PP samples with spherulite, fibrous, dendric morphology by adjusting the melting temperature and concentration of the nucleating agent. 6 Dong indicated effect of final heating temperature on dissolution of b-nucleating agent and the following supermolecular structure of PP.…”

High performance resistive switching memory organic films prepared through PPy growing on graphene oxide substrate

“…To gain insight into the electrical switching effects in the ITO/GO-PPy/Al device, the I-V data were analyzed by using different conduction models which included Ohmic contact, Fowler-Nordheim (F-N) tunneling, space charge limited conduction and thermionic emission limited conduction [1,25,41]. The results show that the OFF-state can be well described by the space charge limited conduction (SCLC) model, which is defined as [25]:…”

“…The low OFF-state current implies that the GO-PPy film owns a plenty of electron trap. The Ohmic model describes a linear relationship between the current and the applied voltage [1]:…”

“…The storage of information has utilized the various types of memory devices including the ferroelectric random access memory devices, phase-change random access memory devices and the resistance random access memory (RRAM) devices [1]. The RRAM devices have advantages of high density, low-cost production, fast write-read speed and low power consumption [2].…”