Low-power 2.5 Gbit/s VCSEL driver in 0.5 µmCMOS technology

Madhavan, B.; Levi, A. F. J.

doi:10.1049/el:19981476

Cited by 18 publications

(5 citation statements)

References 4 publications

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“…Figure 4 shows the circuit of second order active degenerative feedback system. The transfer function is (2).…”

Section: Fig2 Input Stage Circuitmentioning

confidence: 99%

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Design of 10Gb/s VCSEL Driver IC in 0.18μm CMOS

Li¹,

Zhao²

2013

AMR

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A design of 10Gb/s VCSEL driver IC in 0.18μm CMOS process is presented. Employing directly coupled three stages of differential amplifiers, active degenerative feedback and C3A structure, the monolithically integrated circuit can amplify the amplitude of input differential signal to 22mA and offer a bandwidth of 9.4GHz at 10Gb/s with a total power consumption of about 91mW. The driver circuit can offer adjustable modulation current from 1 to 16mA and adjustable bias current from 1 to 10mA. The VCSEL driver can be used in the STM-64 optical fiber communication system.

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“…Figure 4 shows the circuit of second order active degenerative feedback system. The transfer function is (2).…”

Section: Fig2 Input Stage Circuitmentioning

confidence: 99%

“…Conventionally, analogue front ends of optical transceivers are implemented in expensive GaAs or bipolar silicon technology. Silicon CMOS drivers for bit rates up to several gigabits per second for low cost, low power consumption implementations have been reported so far [2] [3].…”

Section: Introductionmentioning

confidence: 99%

Design of 10Gb/s VCSEL Driver IC in 0.18μm CMOS

Li¹,

Zhao²

2013

AMR

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“…In order to achieve high performance, stringent specifications are required, and ref. [2] presents the challenges in designing the laser drive. Analogue front ends adopting expensive bipolar silicon or GaAs technology to achieve high speed and low noise performance are applied in traditional electronic interconnection.…”

Section: Introductionmentioning

confidence: 99%

Design of 12-channel 120Gb/s laser diode driver array in 0.18µm CMOS technology

Sun

Zhao

et al. 2014

2014 International Conference on Advanced Technologies for Communications (ATC 2014)

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A 12-channel 120Gb/s laser diode driver array has been designed in 0.18μm CMOS technology. Under a supply voltage of 1.8V, simulated results show that a single channel has a speed of 10Gb/s at a power consumption of 98mW. A total capacity of 120 Gb/s can be obtained from 12 channels. With three stages of differential amplifiers directly coupled, the single channel amplifier can supply the current up to 26mA adopting negative feedback and capacitive coupled current amplifier (C 3 A) structure. The adjustable modulation current from 1mA to 16mA and the bias current up to 10mA can be generated from this driver circuit. The layout area of the driver array is 3205μm×506μm. This design can be used in high speed optical chips. Keywords-laser diode driver array; 12 channels; C 3 A; active negative feedbackI.

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“…To date, there have been a number of reports on gigabit-per-second VCSEL drivers realized in complementary metal-oxide semiconductor ͑CMOS͒. [7][8][9][10] The traditional topology of modulating the output optical power of an optical transmitter is to steer current into and out of the VCSEL. This method usually entails the placement of a current source either above or below the VCSEL in order to either source or sink current through it.…”

Section: Introductionmentioning

confidence: 99%

018-μm complementary metal-oxide semiconductor push-pull vertical-cavity surface-emitting laser driver operating at 25 Gb/s with symmetric rising and falling edges

et al. 2004

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A vertical-cavity surface-emitting laser (VCSEL) driver design that utilizes a novel push-pull circuit topology is described. The VCSEL driver design can provide both a current pushing and a current pulling mechanism and therefore is capable of producing symmetric rise and fall times. The design was implemented in a 0.18-microm foundry n-well complementary metal-oxide semiconductor technology and operates at data rates up to 2.5 Gb/s with a power consumption of 45 mW at an average optical output power of 1 mW.

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Low-power 2.5 Gbit/s VCSEL driver in 0.5 µmCMOS technology

Cited by 18 publications

References 4 publications

Design of 10Gb/s VCSEL Driver IC in 0.18μm CMOS

Design of 10Gb/s VCSEL Driver IC in 0.18μm CMOS

Design of 12-channel 120Gb/s laser diode driver array in 0.18µm CMOS technology

018-μm complementary metal-oxide semiconductor push-pull vertical-cavity surface-emitting laser driver operating at 25 Gb/s with symmetric rising and falling edges

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Low-power 2.5 Gbit/s VCSEL driver in 0.5 µmCMOS technology

Cited by 18 publications

References 4 publications

Design of 10Gb/s VCSEL Driver IC in 0.18μm CMOS

Design of 10Gb/s VCSEL Driver IC in 0.18μm CMOS

Design of 12-channel 120Gb/s laser diode driver array in 0.18&#x00B5;m CMOS technology

018-μm complementary metal-oxide semiconductor push-pull vertical-cavity surface-emitting laser driver operating at 25 Gb/s with symmetric rising and falling edges

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Design of 12-channel 120Gb/s laser diode driver array in 0.18µm CMOS technology