Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics

Lin, Pao Tai; Singh, Vivek; Lin, Hao‐Yu Greg; Tiwald, Thomas E.; Kimerling, Lionel C.; Agarwal, Anuradha M.

doi:10.1002/adom.201300205

Cited by 63 publications

(51 citation statements)

References 32 publications

(40 reference statements)

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“…For wavelengths shorter than 3.5 μm, standard silicon-on-insulator (SOI) or silicon nitride (SiN x ) on SiO 2 can be used because the silicon dioxide cladding remains optically transparent in this regime [5,6]. At longer wavelengths, strong optical absorption in silicon dioxide compromises the optical performance of single-mode SOI wire waveguides [7].…”

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…2008 [66] 2000 × 140 633 25-50 0.2 2011 [60] 2800 × 100 1550 500 0.09 2013 [67] 800 × 220 900 -0.62 2013 [68] 700 × 100 600 35 0.51 2013 [63] 1800 × 190 1550 115 0.04 2013 [69] 4000 × 2500 3700 200 2.1 2014 [70] 1000 × 400 1270 -0.32 2015 [71] 2700 × 950 2600 230 0.60 2015 [61] 2000 × 200 1550 50 0.3 2016 [72] 1150 × 1350 1598 238 -2017 [73] 2500 × 730 1550 115 0.008 ± 0.001 2019 [74] 350 × 180 532 / 1.36…”

Section: Silica Waveguidesmentioning

confidence: 99%

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

Zhang

Qiu

et al. 2020

Adv Materials Technologies

154

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Silicon photonics has attracted tremendous interest from academia and industry, as the fabrication of the silicon family of photonic devices is mostly compatible with the microelectronics process using complementary metal‐oxide semiconductors (CMOS). Herein, three silicon‐family materials are discussed: silicon, silicon nitride, and silica. In addition, hybrid integration with a 2D material, graphene, is examined. First, the material and waveguide properties are reviewed. Second, typical fabrication processes for waveguide devices are introduced. Subsequently, a variety of passive waveguide devices, operating at different physical dimensions covering wavelength, polarization, and mode, are discussed. They correspond to fixed and tunable filters, polarization beam splitters and rotators, and mode conversion and multiplexing devices. These passive waveguide devices play important roles in a wide range of applications including telecom, interconnects, computing, sensing, quantum information processing, bio‐photonics, and energy.

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“…To demonstrate such a component for the mid-IR regime, we designed and fabricated SiN x directional couplers operating over the wavelength range 2.45 and 2.65 μ m [35]. The spectral response of the fabricated devices, as captured by our mid-IR camera, is shown in figure 5(a).…”

Section: Waveguides and Micro-resonators For Sensingmentioning

confidence: 99%

Mid-infrared materials and devices on a Si platform for optical sensing

Singh¹,

Lin²,

Patel³

et al. 2014

Science and Technology of Advanced Materials

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In this article, we review our recent work on mid-infrared (mid-IR) photonic materials and devices fabricated on silicon for on-chip sensing applications. Pedestal waveguides based on silicon are demonstrated as broadband mid-IR sensors. Our low-loss mid-IR directional couplers demonstrated in SiNx waveguides are useful in differential sensing applications. Photonic crystal cavities and microdisk resonators based on chalcogenide glasses for high sensitivity are also demonstrated as effective mid-IR sensors. Polymer-based functionalization layers, to enhance the sensitivity and selectivity of our sensor devices, are also presented. We discuss the design of mid-IR chalcogenide waveguides integrated with polycrystalline PbTe detectors on a monolithic silicon platform for optical sensing, wherein the use of a low-index spacer layer enables the evanescent coupling of mid-IR light from the waveguides to the detector. Finally, we show the successful fabrication processing of our first prototype mid-IR waveguide-integrated detectors.

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Low‐Stress Silicon Nitride Platform for Mid‐Infrared Broadband and Monolithically Integrated Microphotonics

Cited by 63 publications

References 32 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Silicon Photonic Platform for Passive Waveguide Devices: Materials, Fabrication, and Applications

Mid-infrared materials and devices on a Si platform for optical sensing

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